中文
English
FDU7N20TM-VB Product details
Back to previous pageProduct introduction：
Product Introduction
FDU7N20TM-VB is a high voltage N-channel MOSFET in TO251 package. This MOSFET is manufactured using Trench technology and is designed to handle high voltage and medium current applications. Its maximum drain-source voltage (VDS) is 200V, which can work reliably in high voltage environments. The maximum drain current (ID) of FDU7N20TM-VB is 8A, which is suitable for handling medium current loads. The threshold voltage (Vth) is 3V, ensuring effective conduction under normal working conditions, and has a low on-resistance, providing efficient switching performance.
FDU7N20TM-VB is a high voltage N-channel MOSFET in TO251 package. This MOSFET is manufactured using Trench technology and is designed to handle high voltage and medium current applications. Its maximum drain-source voltage (VDS) is 200V, which can work reliably in high voltage environments. The maximum drain current (ID) of FDU7N20TM-VB is 8A, which is suitable for handling medium current loads. The threshold voltage (Vth) is 3V, ensuring effective conduction under normal working conditions, and has a low on-resistance, providing efficient switching performance.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: FDU7N20TM-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 270mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 8A
- **Technology**: Trench technology
- **Model**: FDU7N20TM-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 270mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 8A
- **Technology**: Trench technology
Domain and module applications：
Applications and Modules
The design features of the FDU7N20TM-VB make it widely applicable in multiple application areas and modules:
1. **High Voltage Switch**: Due to its high drain-source voltage (200V), the FDU7N20TM-VB is suitable for use as a high voltage switch application, such as power management and voltage regulation circuits. In these applications, this MOSFET can reliably handle switching operations in high voltage environments, providing stable performance.
2. **Power Converter**: In DC-DC converters and other power converters, the FDU7N20TM-VB can be used as a power switch component. Its low on-resistance (270mΩ) helps reduce power losses and improve system efficiency, making it an excellent performer in high voltage conversion applications.
3. **Motor Drive**: This MOSFET also performs well in motor drive applications, especially in motor control systems that require high voltage operation. It can handle the forward and reverse control of the motor as well as the speed regulation function, providing efficient switching performance for the motor drive system.
4. **High current protection switch**: In applications where circuits need to be protected from high voltage surges, the FDU7N20TM-VB can be used as a high current protection switch. For example, in battery management systems and inverters, it can effectively control current and voltage to protect other components from overload or faults.
These features make the FDU7N20TM-VB an ideal choice for high voltage and medium current applications, especially in power management, motor drive and protection switch systems.
The design features of the FDU7N20TM-VB make it widely applicable in multiple application areas and modules:
1. **High Voltage Switch**: Due to its high drain-source voltage (200V), the FDU7N20TM-VB is suitable for use as a high voltage switch application, such as power management and voltage regulation circuits. In these applications, this MOSFET can reliably handle switching operations in high voltage environments, providing stable performance.
2. **Power Converter**: In DC-DC converters and other power converters, the FDU7N20TM-VB can be used as a power switch component. Its low on-resistance (270mΩ) helps reduce power losses and improve system efficiency, making it an excellent performer in high voltage conversion applications.
3. **Motor Drive**: This MOSFET also performs well in motor drive applications, especially in motor control systems that require high voltage operation. It can handle the forward and reverse control of the motor as well as the speed regulation function, providing efficient switching performance for the motor drive system.
4. **High current protection switch**: In applications where circuits need to be protected from high voltage surges, the FDU7N20TM-VB can be used as a high current protection switch. For example, in battery management systems and inverters, it can effectively control current and voltage to protect other components from overload or faults.
These features make the FDU7N20TM-VB an ideal choice for high voltage and medium current applications, especially in power management, motor drive and protection switch systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
