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FDU6N50F-VB Product details
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Product Introduction
**FDU6N50F-VB** is a high voltage N-type MOSFET in TO251 package. It has extremely high voltage resistance, can withstand drain-source voltage (VDS) up to 650V, and supports a maximum gate-source voltage (VGS) of ±30V. This MOSFET adopts SJ_Multi-EPI technology, providing high drain current (ID) capability and relatively low on-state resistance (RDS(ON)), making it suitable for high-voltage, high-power applications. Although its RDS(ON) is 950mΩ, which is higher than that of low-voltage MOSFETs, its voltage resistance and stability make it very suitable for use in high-voltage environments.
**FDU6N50F-VB** is a high voltage N-type MOSFET in TO251 package. It has extremely high voltage resistance, can withstand drain-source voltage (VDS) up to 650V, and supports a maximum gate-source voltage (VGS) of ±30V. This MOSFET adopts SJ_Multi-EPI technology, providing high drain current (ID) capability and relatively low on-state resistance (RDS(ON)), making it suitable for high-voltage, high-power applications. Although its RDS(ON) is 950mΩ, which is higher than that of low-voltage MOSFETs, its voltage resistance and stability make it very suitable for use in high-voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-state resistance (RDS(ON))**:
- 950mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI technology
- **Package type**: TO251
- **Configuration**: Single N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-state resistance (RDS(ON))**:
- 950mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
Applications and modules
1. **High voltage power management**:
FDU6N50F-VB provides key switching functions in high voltage power management systems. Its high withstand voltage capability enables it to withstand power switching applications in high voltage environments, and is suitable for use in devices such as high voltage power converters and inverters to ensure safe and stable power output.
2. **Power inverter**:
Suitable for switching elements in power inverters, especially those that need to handle high voltage and high power, such as solar inverters and wind inverters. The high VDS and reliable switching performance of FDU6N50F-VB help inverters maintain efficiency and stability during the conversion process.
3. **Power switch**:
In high voltage power switching applications, FDU6N50F-VB provides powerful switching capabilities to handle loads from high voltage sources. It can be used for switch control in high voltage power systems, such as power protection switches and current circuit breakers.
4. **Industrial Control Systems**:
This MOSFET is also suitable for high voltage switching in industrial control systems. Whether in motor drive systems or other high voltage control modules, the high voltage withstand capability and stability of the FDU6N50F-VB make it a reliable switching solution.
5. **Power Supply Systems**:
In power supply systems, especially those that need to operate in high voltage environments, such as high voltage DC power supplies (HVDC), the FDU6N50F-VB can be used as a switching element to provide high voltage handling capabilities and ensure safe operation of the system.
1. **High voltage power management**:
FDU6N50F-VB provides key switching functions in high voltage power management systems. Its high withstand voltage capability enables it to withstand power switching applications in high voltage environments, and is suitable for use in devices such as high voltage power converters and inverters to ensure safe and stable power output.
2. **Power inverter**:
Suitable for switching elements in power inverters, especially those that need to handle high voltage and high power, such as solar inverters and wind inverters. The high VDS and reliable switching performance of FDU6N50F-VB help inverters maintain efficiency and stability during the conversion process.
3. **Power switch**:
In high voltage power switching applications, FDU6N50F-VB provides powerful switching capabilities to handle loads from high voltage sources. It can be used for switch control in high voltage power systems, such as power protection switches and current circuit breakers.
4. **Industrial Control Systems**:
This MOSFET is also suitable for high voltage switching in industrial control systems. Whether in motor drive systems or other high voltage control modules, the high voltage withstand capability and stability of the FDU6N50F-VB make it a reliable switching solution.
5. **Power Supply Systems**:
In power supply systems, especially those that need to operate in high voltage environments, such as high voltage DC power supplies (HVDC), the FDU6N50F-VB can be used as a switching element to provide high voltage handling capabilities and ensure safe operation of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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