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FDU6N50FTU-VB Product details
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1. FDU6N50FTU-VB Product Introduction
FDU6N50FTU-VB is a high voltage N-channel MOSFET packaged in TO251. This MOSFET is designed for drain-source voltage environments up to 650V and has a gate-source voltage range of ±30V. Its threshold voltage is 3.5V, making it suitable for use in a variety of high-voltage applications. The device uses SJ_Multi-EPI technology to provide a low on-resistance of 950mΩ, ensuring good switching performance and efficiency under high voltage and high power conditions. The FDU6N50FTU-VB is suitable for high voltage power supplies and switching circuits, and performs well in electronic systems that require high voltage and high power processing.
FDU6N50FTU-VB is a high voltage N-channel MOSFET packaged in TO251. This MOSFET is designed for drain-source voltage environments up to 650V and has a gate-source voltage range of ±30V. Its threshold voltage is 3.5V, making it suitable for use in a variety of high-voltage applications. The device uses SJ_Multi-EPI technology to provide a low on-resistance of 950mΩ, ensuring good switching performance and efficiency under high voltage and high power conditions. The FDU6N50FTU-VB is suitable for high voltage power supplies and switching circuits, and performs well in electronic systems that require high voltage and high power processing.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. FDU6N50FTU-VB Detailed parameter description
- **Package type**: TO251
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS = 10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO251
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS = 10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
III. Applications and Module Examples
1. **High-voltage power converters**: The FDU6N50FTU-VB is ideally suited for high-voltage power converters due to its ability to withstand drain-source voltages up to 650V. These converters need to handle currents at high voltages and have high requirements for switching performance. The low on-resistance and stable performance of the FDU6N50FTU-VB ensure efficient operation and reliability of the power converters.
2. **Power inverters**: In solar and other types of power inverters, the FDU6N50FTU-VB can serve as a key switching component. Its high voltage tolerance and good switching characteristics enable it to efficiently convert electrical energy under high voltage conditions, thereby improving the overall efficiency and performance of the inverter.
3. **High-voltage switching circuits**: This MOSFET is also suitable for circuits that require high-voltage switching, such as high-voltage motor drives and industrial equipment. The high voltage and high power handling capabilities of the FDU6N50FTU-VB ensure stability and reliability under high voltage loads.
4. **Power Factor Correction (PFC) Circuit**: In the power factor correction circuit, FDU6N50FTU-VB can be used in high voltage switching applications to help improve the power factor of the power system. Its excellent switching performance and high voltage tolerance can effectively optimize the use of electric energy and improve the overall efficiency of the power system.
In general, FDU6N50FTU-VB is an important component in high voltage and high power applications, suitable for electronic systems that require high voltage switching and stable performance. Its excellent switching characteristics and high voltage handling capabilities make it perform well in various application scenarios.
1. **High-voltage power converters**: The FDU6N50FTU-VB is ideally suited for high-voltage power converters due to its ability to withstand drain-source voltages up to 650V. These converters need to handle currents at high voltages and have high requirements for switching performance. The low on-resistance and stable performance of the FDU6N50FTU-VB ensure efficient operation and reliability of the power converters.
2. **Power inverters**: In solar and other types of power inverters, the FDU6N50FTU-VB can serve as a key switching component. Its high voltage tolerance and good switching characteristics enable it to efficiently convert electrical energy under high voltage conditions, thereby improving the overall efficiency and performance of the inverter.
3. **High-voltage switching circuits**: This MOSFET is also suitable for circuits that require high-voltage switching, such as high-voltage motor drives and industrial equipment. The high voltage and high power handling capabilities of the FDU6N50FTU-VB ensure stability and reliability under high voltage loads.
4. **Power Factor Correction (PFC) Circuit**: In the power factor correction circuit, FDU6N50FTU-VB can be used in high voltage switching applications to help improve the power factor of the power system. Its excellent switching performance and high voltage tolerance can effectively optimize the use of electric energy and improve the overall efficiency of the power system.
In general, FDU6N50FTU-VB is an important component in high voltage and high power applications, suitable for electronic systems that require high voltage switching and stable performance. Its excellent switching characteristics and high voltage handling capabilities make it perform well in various application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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