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FDU6N25TU-VB Product details
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1. FDU6N25TU-VB MOSFET Product Introduction
FDU6N25TU-VB is a high voltage single N-channel MOSFET in TO251 package. It is designed to handle a drain-source voltage (VDS) of 250V and has a gate-source voltage (VGS) range of ±20V. This MOSFET uses trench technology to provide relatively high on-resistance (RDS(ON)) and stable switching performance. Despite its on-resistance of 1100mΩ and maximum drain current of 3.8A, it performs well in high voltage applications and is suitable for switching and control applications in high voltage environments.
FDU6N25TU-VB is a high voltage single N-channel MOSFET in TO251 package. It is designed to handle a drain-source voltage (VDS) of 250V and has a gate-source voltage (VGS) range of ±20V. This MOSFET uses trench technology to provide relatively high on-resistance (RDS(ON)) and stable switching performance. Despite its on-resistance of 1100mΩ and maximum drain current of 3.8A, it performs well in high voltage applications and is suitable for switching and control applications in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3V | 3.8A | 1100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3V | 3.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3V | 3.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description of FDU6N25TU-VB
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 1100mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 3.8A
- **Technology**: Trench technology
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 1100mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 3.8A
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module examples of FDU6N25TU-VB
FDU6N25TU-VB MOSFET is suitable for the following fields and modules due to its high voltage handling capability:
1. **High Voltage Switches**:
- Due to its 250V drain-source voltage (VDS), FDU6N25TU-VB is very suitable for high voltage switching applications. For example, it can be used in the switching circuit of a high voltage DC-DC converter to ensure stable operation in a high voltage environment.
2. **Power Management**:
- In power management systems that need to handle higher voltages, this MOSFET can be used as a switching element, such as in power converters and regulators for high voltage control and switching operations to achieve efficient power conversion and energy management.
3. **Power Electronics Devices**:
- In power electronic devices, such as high voltage inverters and power modules, FDU6N25TU-VB can be used to switch high voltage loads. Its high voltage tolerance and stability make it suitable for providing reliable switching control in these applications.
4. **Industrial Control**:
- In industrial control systems, FDU6N25TU-VB can be used for high voltage switching applications, such as controlling high voltage loads in automation equipment and control systems to ensure efficient and safe operation of the system.
FDU6N25TU-VB MOSFET is suitable for the following fields and modules due to its high voltage handling capability:
1. **High Voltage Switches**:
- Due to its 250V drain-source voltage (VDS), FDU6N25TU-VB is very suitable for high voltage switching applications. For example, it can be used in the switching circuit of a high voltage DC-DC converter to ensure stable operation in a high voltage environment.
2. **Power Management**:
- In power management systems that need to handle higher voltages, this MOSFET can be used as a switching element, such as in power converters and regulators for high voltage control and switching operations to achieve efficient power conversion and energy management.
3. **Power Electronics Devices**:
- In power electronic devices, such as high voltage inverters and power modules, FDU6N25TU-VB can be used to switch high voltage loads. Its high voltage tolerance and stability make it suitable for providing reliable switching control in these applications.
4. **Industrial Control**:
- In industrial control systems, FDU6N25TU-VB can be used for high voltage switching applications, such as controlling high voltage loads in automation equipment and control systems to ensure efficient and safe operation of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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