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FDU6635-VB Product details
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1. FDU6635-VB Product Introduction
FDU6635-VB is a high-performance N-channel MOSFET in TO251 package. This MOSFET is designed using advanced Trench technology and has excellent current handling capability and low on-resistance. It can operate stably at a maximum drain-source voltage of 30V and has a maximum drain current capability of up to 50A. The high efficiency and high current handling characteristics of FDU6635-VB make it excellent in various power-intensive applications and is suitable for power systems that require efficient switching and high current handling.
FDU6635-VB is a high-performance N-channel MOSFET in TO251 package. This MOSFET is designed using advanced Trench technology and has excellent current handling capability and low on-resistance. It can operate stably at a maximum drain-source voltage of 30V and has a maximum drain current capability of up to 50A. The high efficiency and high current handling characteristics of FDU6635-VB make it excellent in various power-intensive applications and is suitable for power systems that require efficient switching and high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. FDU6635-VB Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench technology
- **Maximum power consumption**: Depends on specific application and thermal design
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench technology
- **Maximum power consumption**: Depends on specific application and thermal design
Domain and module applications：
III. Applications and Module Examples
1. **Power Management System**: The FDU6635-VB provides high efficiency and high current handling capability in power management systems. Due to its low on-resistance and high drain current capability, it is ideal for use in DC-DC converters and other power switching applications, which can effectively improve power efficiency and reduce power consumption.
2. **Motor Drive**: In motor drive applications, the high current capability and low on-resistance of the FDU6635-VB make it an ideal choice for controlling motor start-stop and speed regulation. It can handle the high current generated by the motor during startup and operation, and is suitable for power tools, electric vehicles, and industrial motor drive systems.
3. **Power Amplifier**: The FDU6635-VB excels in power amplifier applications. Its low on-resistance and high current handling capability enable it to effectively control high power signals, and is suitable for audio amplifiers, RF power amplifiers, and other amplifier modules that require high power switching.
4. **Battery Management System**: FDU6635-VB can be used as a switch component in a battery management system. Its high current handling capability and low on-resistance enable it to effectively handle the battery charging and discharging process. It is suitable for various battery management and protection systems to ensure high efficiency and stability of the system.
In general, FDU6635-VB is a high-voltage, high-current, high-efficiency N-channel MOSFET, which is widely used in power management, motor drive, power amplifier and battery management, providing excellent switching performance and stable working performance.
1. **Power Management System**: The FDU6635-VB provides high efficiency and high current handling capability in power management systems. Due to its low on-resistance and high drain current capability, it is ideal for use in DC-DC converters and other power switching applications, which can effectively improve power efficiency and reduce power consumption.
2. **Motor Drive**: In motor drive applications, the high current capability and low on-resistance of the FDU6635-VB make it an ideal choice for controlling motor start-stop and speed regulation. It can handle the high current generated by the motor during startup and operation, and is suitable for power tools, electric vehicles, and industrial motor drive systems.
3. **Power Amplifier**: The FDU6635-VB excels in power amplifier applications. Its low on-resistance and high current handling capability enable it to effectively control high power signals, and is suitable for audio amplifiers, RF power amplifiers, and other amplifier modules that require high power switching.
4. **Battery Management System**: FDU6635-VB can be used as a switch component in a battery management system. Its high current handling capability and low on-resistance enable it to effectively handle the battery charging and discharging process. It is suitable for various battery management and protection systems to ensure high efficiency and stability of the system.
In general, FDU6635-VB is a high-voltage, high-current, high-efficiency N-channel MOSFET, which is widely used in power management, motor drive, power amplifier and battery management, providing excellent switching performance and stable working performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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