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FDU5N53-VB Product details
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1. FDU5N53-VB Product Introduction
FDU5N53-VB is a high-voltage, high-power single-channel N-channel MOSFET packaged in TO251. This MOSFET is designed to withstand drain-source voltages up to 650V and is suitable for applications that require high voltage handling capabilities. Its threshold voltage is 3.5V and can operate stably in a high-voltage environment. Using SJ_Multi-EPI technology, FDU5N53-VB provides lower on-resistance and excellent switching performance, enabling it to perform well in high-power applications. This device is widely used in high-voltage power management and switching circuits, and is suitable for a variety of scenarios that require high voltage and high power handling.
FDU5N53-VB is a high-voltage, high-power single-channel N-channel MOSFET packaged in TO251. This MOSFET is designed to withstand drain-source voltages up to 650V and is suitable for applications that require high voltage handling capabilities. Its threshold voltage is 3.5V and can operate stably in a high-voltage environment. Using SJ_Multi-EPI technology, FDU5N53-VB provides lower on-resistance and excellent switching performance, enabling it to perform well in high-power applications. This device is widely used in high-voltage power management and switching circuits, and is suitable for a variety of scenarios that require high voltage and high power handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. FDU5N53-VB Detailed parameter description
- **Package type**: TO251
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS = 10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO251
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS = 10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
3. Applications and Module Examples
1. **High-voltage Power Management**: The FDU5N53-VB is ideal for use in high-voltage power management systems due to its ability to withstand drain-source voltages up to 650V. In power converters and power supply modules, this MOSFET can be used for high-voltage switching, helping to stabilize power output and improve the overall efficiency of the system.
2. **Power Inverter**: The high voltage and high power handling capabilities of the FDU5N53-VB make it an ideal choice in solar inverter and other power inverter applications. It can reliably switch under high voltage conditions, thereby improving the efficiency and reliability of the inverter.
3. **High-voltage Switching Circuit**: This MOSFET is also suitable for high-voltage switching circuits, such as high-voltage motor drives and industrial electrical equipment. In these applications, the high voltage tolerance and low on-resistance of the FDU5N53-VB ensure the stability and efficiency of the circuit.
4. **Power Factor Correction**: In power factor correction (PFC) circuits, the FDU5N53-VB can be used in high-voltage switching applications to help improve the power factor of power systems. Its excellent switching performance and high voltage handling capabilities enable it to effectively control current and optimize power usage.
In general, the FDU5N53-VB is an indispensable component in high-voltage, high-power applications, and its excellent performance and reliability enable it to play a key role in a variety of electronic devices that require high voltage and high power handling.
1. **High-voltage Power Management**: The FDU5N53-VB is ideal for use in high-voltage power management systems due to its ability to withstand drain-source voltages up to 650V. In power converters and power supply modules, this MOSFET can be used for high-voltage switching, helping to stabilize power output and improve the overall efficiency of the system.
2. **Power Inverter**: The high voltage and high power handling capabilities of the FDU5N53-VB make it an ideal choice in solar inverter and other power inverter applications. It can reliably switch under high voltage conditions, thereby improving the efficiency and reliability of the inverter.
3. **High-voltage Switching Circuit**: This MOSFET is also suitable for high-voltage switching circuits, such as high-voltage motor drives and industrial electrical equipment. In these applications, the high voltage tolerance and low on-resistance of the FDU5N53-VB ensure the stability and efficiency of the circuit.
4. **Power Factor Correction**: In power factor correction (PFC) circuits, the FDU5N53-VB can be used in high-voltage switching applications to help improve the power factor of power systems. Its excellent switching performance and high voltage handling capabilities enable it to effectively control current and optimize power usage.
In general, the FDU5N53-VB is an indispensable component in high-voltage, high-power applications, and its excellent performance and reliability enable it to play a key role in a variety of electronic devices that require high voltage and high power handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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