FDU3N40TU-VB Product details
Product introduction:
FDU3N40TU-VB is a high-voltage single N-channel MOSFET in TO251 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) is 650V, which can work stably in high voltage environment. The gate-source voltage (VGS) of this MOSFET can reach up to ±30V, providing a wide control voltage range. The gate threshold voltage (Vth) is 3.5V, ensuring effective conduction at a reasonable gate voltage. The on-resistance (RDS(ON)) of FDU3N40TU-VB is 4300mΩ (at VGS = 10V), and the maximum drain current (ID) is 2A. It uses planar technology and is suitable for high voltage switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Package**: TO251, a package suitable for high power density and high voltage applications.
- **Configuration**: Single N-channel MOSFET, suitable for single-channel switching and control applications.
- **VDS (drain-source voltage)**: 650V, the maximum voltage between the drain and the source.
- **VGS (gate-source voltage)**: ±30V, the maximum voltage difference between the gate and the source.
- **Vth (gate threshold voltage)**: 3.5V, the minimum gate voltage required for the MOSFET to start conducting.
- **RDS(ON) (on-resistance)**:
- 4300mΩ @ VGS = 10V
- **ID (drain current)**: 2A, maximum continuous drain current.
- **Technology**: Plannar technology, providing stable switching performance and high voltage tolerance.
Domain and module applications:
The characteristics of the FDU3N40TU-VB MOSFET make it widely used in the following fields and modules:
1. **High Voltage Power Management**: In high voltage power management systems, such as high voltage DC-DC converters and switching power supplies, the high withstand voltage characteristics of the FDU3N40TU-VB can handle high voltage inputs and provide stable switching performance. This helps improve power conversion efficiency and reliability, ensuring stable operation of the system in a high voltage environment.
2. **Industrial Equipment**: In high voltage control systems for industrial equipment, the FDU3N40TU-VB can be used to drive and control high voltage loads. Its high withstand voltage and on-resistance characteristics make it suitable for industrial motor control, relay drive and other high power load switching applications.
3. **Home Appliances**: In home appliances, such as electric heaters, air conditioners and washing machines, the FDU3N40TU-VB can be used for high voltage switch control. This ensures that the device can stably switch high-voltage loads during operation, improving the operating efficiency and safety of the device.
4. **Automotive Electronics**: In automotive electronic systems, especially in high-voltage battery management systems for electric and hybrid vehicles, the FDU3N40TU-VB is suitable for use as a high-voltage switching component. Its high voltage tolerance and stability help manage and protect battery systems, improving the reliability and safety of automotive electronics.
5. **Power Electronics**: In power electronics applications, such as inverters and power factor correction circuits, the high voltage withstand and stable switching characteristics of the FDU3N40TU-VB make it very suitable. It can handle high voltage and high power, optimize the power conversion process, and improve the overall efficiency of the system.
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