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FDU3860-VB Product details
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FDU3860-VB MOSFET Product Introduction
The FDU3860-VB is a high-performance N-channel MOSFET in a TO251 package, designed for high voltage and high current applications. It has a drain-source voltage (VDS) capability of 100V and can handle a continuous drain current (ID) of up to 35A. The threshold voltage (Vth) of this MOSFET is 1.8V, which ensures stable conduction at a lower gate-source voltage. Its on-resistance (RDS(ON)) is 36mΩ at a VGS of 10V, and it uses Trench technology to optimize conduction performance and switching speed.
The FDU3860-VB is a high-performance N-channel MOSFET in a TO251 package, designed for high voltage and high current applications. It has a drain-source voltage (VDS) capability of 100V and can handle a continuous drain current (ID) of up to 35A. The threshold voltage (Vth) of this MOSFET is 1.8V, which ensures stable conduction at a lower gate-source voltage. Its on-resistance (RDS(ON)) is 36mΩ at a VGS of 10V, and it uses Trench technology to optimize conduction performance and switching speed.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
1. **Package**: TO251
- The TO251 package is a standard surface mount package with good thermal management performance and electrical connection stability, suitable for medium and high power MOSFET applications.
2. **Configuration**: Single Channel N-Channel
- Single Channel N-Channel MOSFET is the most common type, suitable for use as switches and amplifiers, and can provide efficient performance in current and voltage control.
3. **Drain-Source Voltage (VDS)**: 100V
- The maximum drain-source voltage is 100V, enabling it to handle high voltage applications such as high voltage power switches and power management circuits.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum gate-source voltage is ±20V, ensuring stable operation under various operating conditions and providing a wide control range.
5. **Threshold Voltage (Vth)**: 1.8V
- The threshold voltage of 1.8V defines the starting point of the MOSFET turn-on, which is suitable for low voltage drive applications.
6. **On-resistance (RDS(ON))**:
- 36mΩ at VGS = 10V
- Low on-resistance helps reduce power consumption and improve efficiency, suitable for high current applications.
7. **Continuous Drain Current (ID)**: 35A
- The maximum continuous drain current is 35A, suitable for switching and control applications handling medium to high current loads.
8. **Technology**: Trench
- Adopting Trench technology, it provides low on-resistance and high switching speed, optimizing the performance and efficiency of the MOSFET.
1. **Package**: TO251
- The TO251 package is a standard surface mount package with good thermal management performance and electrical connection stability, suitable for medium and high power MOSFET applications.
2. **Configuration**: Single Channel N-Channel
- Single Channel N-Channel MOSFET is the most common type, suitable for use as switches and amplifiers, and can provide efficient performance in current and voltage control.
3. **Drain-Source Voltage (VDS)**: 100V
- The maximum drain-source voltage is 100V, enabling it to handle high voltage applications such as high voltage power switches and power management circuits.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum gate-source voltage is ±20V, ensuring stable operation under various operating conditions and providing a wide control range.
5. **Threshold Voltage (Vth)**: 1.8V
- The threshold voltage of 1.8V defines the starting point of the MOSFET turn-on, which is suitable for low voltage drive applications.
6. **On-resistance (RDS(ON))**:
- 36mΩ at VGS = 10V
- Low on-resistance helps reduce power consumption and improve efficiency, suitable for high current applications.
7. **Continuous Drain Current (ID)**: 35A
- The maximum continuous drain current is 35A, suitable for switching and control applications handling medium to high current loads.
8. **Technology**: Trench
- Adopting Trench technology, it provides low on-resistance and high switching speed, optimizing the performance and efficiency of the MOSFET.
Domain and module applications：
Application Examples
1. **High Voltage Power Switch**
- The high drain-source voltage (100V) of the FDU3860-VB makes it ideal for high voltage power switch applications. For example, in high voltage DC-DC converters, the MOSFET can be used for efficient switching power supplies to provide stable voltage output.
2. **Motor Drive**
- In motor drive applications, the FDU3860-VB can be used as a motor switch controller to handle high voltage and high current, and is suitable for use in motor start and run control circuits to provide stable drive and control.
3. **Power Management**
- In power management systems, such as power adapters and battery management systems, the FDU3860-VB can efficiently switch current and voltage to optimize the system's power conversion and management efficiency.
4. **Power Protection Circuit**
- The MOSFET can be used in power protection circuits, such as overvoltage protection and overcurrent protection. Its high voltage handling capability and low on-resistance enable it to provide reliable performance in protection circuits to avoid system overload.
5. **Industrial Equipment**
- In industrial equipment, the FDU3860-VB can be used in high-voltage switches and control modules such as inverters and power modules to provide stable switching performance and efficient power management.
The high voltage and high current handling capabilities of the FDU3860-VB enable it to excel in high-voltage power switching, motor drives, power management, power protection and industrial equipment, making it an ideal choice for high performance and reliability.
1. **High Voltage Power Switch**
- The high drain-source voltage (100V) of the FDU3860-VB makes it ideal for high voltage power switch applications. For example, in high voltage DC-DC converters, the MOSFET can be used for efficient switching power supplies to provide stable voltage output.
2. **Motor Drive**
- In motor drive applications, the FDU3860-VB can be used as a motor switch controller to handle high voltage and high current, and is suitable for use in motor start and run control circuits to provide stable drive and control.
3. **Power Management**
- In power management systems, such as power adapters and battery management systems, the FDU3860-VB can efficiently switch current and voltage to optimize the system's power conversion and management efficiency.
4. **Power Protection Circuit**
- The MOSFET can be used in power protection circuits, such as overvoltage protection and overcurrent protection. Its high voltage handling capability and low on-resistance enable it to provide reliable performance in protection circuits to avoid system overload.
5. **Industrial Equipment**
- In industrial equipment, the FDU3860-VB can be used in high-voltage switches and control modules such as inverters and power modules to provide stable switching performance and efficient power management.
The high voltage and high current handling capabilities of the FDU3860-VB enable it to excel in high-voltage power switching, motor drives, power management, power protection and industrial equipment, making it an ideal choice for high performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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