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FDU3672-VB Product details
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1. FDU3672-VB Product Introduction
FDU3672-VB is a high-performance N-channel MOSFET packaged in TO251. This MOSFET uses advanced Trench technology, can operate stably at drain-source voltages up to 100V, and has extremely low on-resistance and high drain current capability. FDU3672-VB is designed to provide efficient switching performance and high current handling capabilities, making it very suitable for applications requiring high voltage and high current, such as power management and motor drive systems.
FDU3672-VB is a high-performance N-channel MOSFET packaged in TO251. This MOSFET uses advanced Trench technology, can operate stably at drain-source voltages up to 100V, and has extremely low on-resistance and high drain current capability. FDU3672-VB is designed to provide efficient switching performance and high current handling capabilities, making it very suitable for applications requiring high voltage and high current, such as power management and motor drive systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | 12.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. FDU3672-VB Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 12.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 65A
- **Technology**: Trench technology
- **Maximum power consumption**: Depends on specific application and thermal design
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 12.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 65A
- **Technology**: Trench technology
- **Maximum power consumption**: Depends on specific application and thermal design
Domain and module applications：
3. Application fields and module examples
1. **Power management system**: FDU3672-VB is an ideal choice in power management systems. Due to its high voltage tolerance and low on-resistance, this MOSFET can be used in power switches, DC-DC converter switch control, and other power management applications to provide efficient and stable power conversion and management functions.
2. **Motor drive**: In motor drive systems, FDU3672-VB can efficiently control the start and stop and speed regulation of motors. Its high drain current capability enables it to handle the high current requirements during motor start and operation, and is suitable for various motor control modules such as power tools, electric vehicles, and industrial drive systems.
3. **Power amplifier**: FDU3672-VB performs well in power amplifier applications. Its high voltage and high current capabilities enable it to handle high power signals while maintaining low power consumption and high efficiency. It is particularly suitable for amplifier applications that require high power switching, such as audio amplifiers and RF power amplifiers.
4. **Battery Management System**: In the battery management system, FDU3672-VB can be used as a battery protection switch. It can handle the high current demand during charging and discharging, provide reliable current control and protection functions, and is suitable for various battery management and protection modules.
In short, FDU3672-VB is a high-voltage, high-current, high-efficiency N-channel MOSFET, which is widely used in power management, motor drive, power amplifier and battery management, providing excellent switching performance and stable working state.
1. **Power management system**: FDU3672-VB is an ideal choice in power management systems. Due to its high voltage tolerance and low on-resistance, this MOSFET can be used in power switches, DC-DC converter switch control, and other power management applications to provide efficient and stable power conversion and management functions.
2. **Motor drive**: In motor drive systems, FDU3672-VB can efficiently control the start and stop and speed regulation of motors. Its high drain current capability enables it to handle the high current requirements during motor start and operation, and is suitable for various motor control modules such as power tools, electric vehicles, and industrial drive systems.
3. **Power amplifier**: FDU3672-VB performs well in power amplifier applications. Its high voltage and high current capabilities enable it to handle high power signals while maintaining low power consumption and high efficiency. It is particularly suitable for amplifier applications that require high power switching, such as audio amplifiers and RF power amplifiers.
4. **Battery Management System**: In the battery management system, FDU3672-VB can be used as a battery protection switch. It can handle the high current demand during charging and discharging, provide reliable current control and protection functions, and is suitable for various battery management and protection modules.
In short, FDU3672-VB is a high-voltage, high-current, high-efficiency N-channel MOSFET, which is widely used in power management, motor drive, power amplifier and battery management, providing excellent switching performance and stable working state.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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