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FDU16AN08A0-VB Product details
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1. FDU16AN08A0-VB MOSFET Product Introduction
FDU16AN08A0-VB is a high-performance single N-channel MOSFET in TO251 package. It has a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, which is very suitable for handling high current applications. This MOSFET adopts advanced trench technology, has low on-resistance, provides excellent switching performance and efficient energy transfer. Its maximum drain current is up to 75A, making it an ideal choice for applications requiring high current handling and low power consumption.
FDU16AN08A0-VB is a high-performance single N-channel MOSFET in TO251 package. It has a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, which is very suitable for handling high current applications. This MOSFET adopts advanced trench technology, has low on-resistance, provides excellent switching performance and efficient energy transfer. Its maximum drain current is up to 75A, making it an ideal choice for applications requiring high current handling and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | 6.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description of FDU16AN08A0-VB
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 8.7mΩ @ VGS = 4.5V
- 6.4mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 75A
- **Technology**: Trench technology
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 8.7mΩ @ VGS = 4.5V
- 6.4mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 75A
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module examples of FDU16AN08A0-VB
FDU16AN08A0-VB MOSFET is suitable for the following fields and modules due to its excellent performance and high current handling capability:
1. **High Power Switches**:
- Due to its extremely low on-resistance and high current handling capability, FDU16AN08A0-VB is very suitable for high power switching applications. For example, in power supplies, especially in high power DC-DC converters, it can be used to switch large currents efficiently and reduce energy losses.
2. **Motor Drives**:
- In motor control circuits, the high current capability and low on-resistance of FDU16AN08A0-VB make it suitable for motor drive modules, especially for applications that require high current and efficient energy transmission, such as power tools, electric vehicle drive systems, and industrial motor control.
3. **Power Converters**:
- The high drain-source voltage and high current handling capability of this MOSFET make it an ideal choice for power converters. For example, in high-efficiency AC-DC converters and DC-DC converters, it can provide efficient switching operation and stable performance.
4. **LED Driving Circuits**:
- FDU16AN08A0-VB is also suitable for high-power switching applications in LED driving circuits. Its low on-resistance and high current handling capability can effectively drive high-power LED lamps to achieve stable light output and efficient energy management.
FDU16AN08A0-VB MOSFET is suitable for the following fields and modules due to its excellent performance and high current handling capability:
1. **High Power Switches**:
- Due to its extremely low on-resistance and high current handling capability, FDU16AN08A0-VB is very suitable for high power switching applications. For example, in power supplies, especially in high power DC-DC converters, it can be used to switch large currents efficiently and reduce energy losses.
2. **Motor Drives**:
- In motor control circuits, the high current capability and low on-resistance of FDU16AN08A0-VB make it suitable for motor drive modules, especially for applications that require high current and efficient energy transmission, such as power tools, electric vehicle drive systems, and industrial motor control.
3. **Power Converters**:
- The high drain-source voltage and high current handling capability of this MOSFET make it an ideal choice for power converters. For example, in high-efficiency AC-DC converters and DC-DC converters, it can provide efficient switching operation and stable performance.
4. **LED Driving Circuits**:
- FDU16AN08A0-VB is also suitable for high-power switching applications in LED driving circuits. Its low on-resistance and high current handling capability can effectively drive high-power LED lamps to achieve stable light output and efficient energy management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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