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FDT86256-VB Product details
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FDT86256-VB MOSFET Product Introduction
FDT86256-VB is a single N-channel MOSFET in SOT223 package, designed for high voltage, high current switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 150V, enabling it to operate stably in a high voltage environment. Its gate-source voltage (VGS) can reach up to ±20V, suitable for a variety of control signal voltage ranges. The gate threshold voltage (Vth) of FDT86256-VB is 2.5V, ensuring effective conduction at lower gate voltages. Its on-resistance (RDS(ON)) is 283mΩ (at VGS = 10V), providing stable current transfer capability, and a maximum drain current (ID) of 3A. This MOSFET uses trench technology to optimize switching characteristics and power efficiency, and is suitable for a variety of high voltage, high power density applications.
FDT86256-VB is a single N-channel MOSFET in SOT223 package, designed for high voltage, high current switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 150V, enabling it to operate stably in a high voltage environment. Its gate-source voltage (VGS) can reach up to ±20V, suitable for a variety of control signal voltage ranges. The gate threshold voltage (Vth) of FDT86256-VB is 2.5V, ensuring effective conduction at lower gate voltages. Its on-resistance (RDS(ON)) is 283mΩ (at VGS = 10V), providing stable current transfer capability, and a maximum drain current (ID) of 3A. This MOSFET uses trench technology to optimize switching characteristics and power efficiency, and is suitable for a variety of high voltage, high power density applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 150V | 2.5V | 3A | 283mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 150V | 2.5V | 3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 150V | 2.5V | 3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Package**: SOT223, a compact package suitable for high power density and high current applications.
- **Configuration**: Single N-channel MOSFET, suitable for single-channel switching and control applications.
- **VDS (drain-source voltage)**: 150V, the maximum voltage between the drain and the source.
- **VGS (gate-source voltage)**: ±20V, the maximum voltage difference between the gate and the source.
- **Vth (gate threshold voltage)**: 2.5V, the minimum gate voltage required for the MOSFET to start conducting.
- **RDS(ON) (on-resistance)**:
- 283mΩ @ VGS = 10V
- **ID (drain current)**: 3A, maximum continuous drain current.
- **Technology**: Trench technology, which optimizes switching performance and power efficiency.
- **Package**: SOT223, a compact package suitable for high power density and high current applications.
- **Configuration**: Single N-channel MOSFET, suitable for single-channel switching and control applications.
- **VDS (drain-source voltage)**: 150V, the maximum voltage between the drain and the source.
- **VGS (gate-source voltage)**: ±20V, the maximum voltage difference between the gate and the source.
- **Vth (gate threshold voltage)**: 2.5V, the minimum gate voltage required for the MOSFET to start conducting.
- **RDS(ON) (on-resistance)**:
- 283mΩ @ VGS = 10V
- **ID (drain current)**: 3A, maximum continuous drain current.
- **Technology**: Trench technology, which optimizes switching performance and power efficiency.
Domain and module applications：
Application Examples
The design and performance characteristics of the FDT86256-VB MOSFET make it widely used in the following fields and modules:
1. **Power Management**: In high voltage power management applications, such as high voltage DC-DC converters and power switches, the high voltage withstand capability and stable current control characteristics of the FDT86256-VB make it very suitable. This helps to improve the overall efficiency and reliability of the system and ensure that the power module operates stably under high voltage environments.
2. **High Voltage Load Switch**: In load switching applications that require high voltage and high current control, such as industrial equipment and motor drive circuits, the FDT86256-VB provides reliable switching performance. Its higher drain-source voltage and on-resistance can handle larger load currents and is suitable for motor control and switching power modules.
3. **Power Amplifier**: In power amplifier circuits, such as audio amplifiers and RF amplifiers, the FDT86256-VB can be used as a switch and protection component. Its low on-resistance and high voltage tolerance help reduce power loss and improve amplifier efficiency and stability.
4. **Automotive Electronics**: In automotive electronic systems, such as on-board power management and electric drive systems, the high voltage tolerance and stability of the FDT86256-VB make it suitable for use as a switching component. It can handle the high voltage and high current conditions in the automotive environment, improving the reliability and safety of the system.
5. **Motor Control**: In motor control modules, the FDT86256-VB can be used to drive high-voltage motor loads. Its high voltage and current handling capabilities, combined with low on-resistance, help improve the efficiency and stability of motor control systems.
The design and performance characteristics of the FDT86256-VB MOSFET make it widely used in the following fields and modules:
1. **Power Management**: In high voltage power management applications, such as high voltage DC-DC converters and power switches, the high voltage withstand capability and stable current control characteristics of the FDT86256-VB make it very suitable. This helps to improve the overall efficiency and reliability of the system and ensure that the power module operates stably under high voltage environments.
2. **High Voltage Load Switch**: In load switching applications that require high voltage and high current control, such as industrial equipment and motor drive circuits, the FDT86256-VB provides reliable switching performance. Its higher drain-source voltage and on-resistance can handle larger load currents and is suitable for motor control and switching power modules.
3. **Power Amplifier**: In power amplifier circuits, such as audio amplifiers and RF amplifiers, the FDT86256-VB can be used as a switch and protection component. Its low on-resistance and high voltage tolerance help reduce power loss and improve amplifier efficiency and stability.
4. **Automotive Electronics**: In automotive electronic systems, such as on-board power management and electric drive systems, the high voltage tolerance and stability of the FDT86256-VB make it suitable for use as a switching component. It can handle the high voltage and high current conditions in the automotive environment, improving the reliability and safety of the system.
5. **Motor Control**: In motor control modules, the FDT86256-VB can be used to drive high-voltage motor loads. Its high voltage and current handling capabilities, combined with low on-resistance, help improve the efficiency and stability of motor control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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