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FDT86246-VB Product details
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FDT86246-VB MOSFET Product Introduction
The FDT86246-VB is a high voltage N-channel MOSFET in a SOT223 package. It is designed to handle higher voltage applications and has a drain-source voltage (VDS) capability of 150V. The MOSFET has a threshold voltage (Vth) of 2.5V and can operate stably under low voltage conditions. Its on-resistance (RDS(ON)) is 283mΩ at a VGS of 10V and a maximum continuous current of 3A. Using Trench technology, the FDT86246-VB provides excellent switching performance and reliability for high voltage and medium current switching applications.
The FDT86246-VB is a high voltage N-channel MOSFET in a SOT223 package. It is designed to handle higher voltage applications and has a drain-source voltage (VDS) capability of 150V. The MOSFET has a threshold voltage (Vth) of 2.5V and can operate stably under low voltage conditions. Its on-resistance (RDS(ON)) is 283mΩ at a VGS of 10V and a maximum continuous current of 3A. Using Trench technology, the FDT86246-VB provides excellent switching performance and reliability for high voltage and medium current switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 150V | 2.5V | 3A | 283mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 150V | 2.5V | 3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 150V | 2.5V | 3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
1. **Package**: SOT223
- The SOT223 package is suitable for surface mounting and has good thermal management and electrical performance. It is commonly used in power switching and medium current circuit design.
2. **Configuration**: Single-channel N-channel
- Single-channel N-channel MOSFET is suitable for use as a switch and amplification application, and can provide efficient control in load switching and power management.
3. **Drain-source voltage (VDS)**: 150V
- The maximum drain-source voltage is 150V, which is suitable for high voltage applications such as high voltage power switches and protection circuits.
4. **Gate-source voltage (VGS)**: ±20V
- The maximum gate-source voltage is ±20V, which supports a wide range of control signals and ensures that the MOSFET works stably under various operating conditions.
5. **Threshold Voltage (Vth)**: 2.5V
- The threshold voltage is 2.5V, which defines the starting point of the MOSFET turn-on, suitable for low voltage control applications.
6. **On-resistance (RDS(ON))**:
- 283mΩ at VGS = 10V
- Low on-resistance helps reduce power consumption and improve efficiency.
7. **Continuous Drain Current (ID)**: 3A
- The maximum continuous drain current is 3A, suitable for switching applications handling medium current loads.
8. **Technology**: Trench
- Adopting Trench technology, it provides low on-resistance and high switching speed, optimizing the performance of MOSFET.
1. **Package**: SOT223
- The SOT223 package is suitable for surface mounting and has good thermal management and electrical performance. It is commonly used in power switching and medium current circuit design.
2. **Configuration**: Single-channel N-channel
- Single-channel N-channel MOSFET is suitable for use as a switch and amplification application, and can provide efficient control in load switching and power management.
3. **Drain-source voltage (VDS)**: 150V
- The maximum drain-source voltage is 150V, which is suitable for high voltage applications such as high voltage power switches and protection circuits.
4. **Gate-source voltage (VGS)**: ±20V
- The maximum gate-source voltage is ±20V, which supports a wide range of control signals and ensures that the MOSFET works stably under various operating conditions.
5. **Threshold Voltage (Vth)**: 2.5V
- The threshold voltage is 2.5V, which defines the starting point of the MOSFET turn-on, suitable for low voltage control applications.
6. **On-resistance (RDS(ON))**:
- 283mΩ at VGS = 10V
- Low on-resistance helps reduce power consumption and improve efficiency.
7. **Continuous Drain Current (ID)**: 3A
- The maximum continuous drain current is 3A, suitable for switching applications handling medium current loads.
8. **Technology**: Trench
- Adopting Trench technology, it provides low on-resistance and high switching speed, optimizing the performance of MOSFET.
Domain and module applications：
Application Examples
1. **High-voltage power switch**
- The FDT86246-VB's drain-source voltage of up to 150V makes it suitable for high-voltage power switch applications. For example, in high-voltage DC-DC converters, this MOSFET can be used to achieve efficient voltage conversion and current switching.
2. **Power management and control circuits**
- In power management circuits, such as power adapters and battery management systems, the low on-resistance and high voltage withstand capability of the FDT86246-VB enable it to effectively manage current and voltage, optimizing the system's power conversion and efficiency.
3. **Protection circuits**
- This MOSFET can be used in high-voltage protection circuits, such as overvoltage protection and overcurrent protection circuits. Its high drain-source voltage and low on-resistance characteristics ensure reliable protection under high voltage conditions.
4. **Motor drive**
- In motor drive applications, the FDT86246-VB can be used as a switch controller for the motor. It can handle higher voltages and provide stable current switching, making it suitable for control circuits for motor start-up and operation.
5. **Industrial equipment**
- In industrial equipment, the FDT86246-VB can be used in high-voltage switches and control modules, such as inverters and power management systems, to provide efficient switch control and protection.
The high voltage capability and low on-resistance of the FDT86246-VB make it an excellent choice for high performance and reliability in the fields of high-voltage power switching, power management, protection circuits, and motor drives.
1. **High-voltage power switch**
- The FDT86246-VB's drain-source voltage of up to 150V makes it suitable for high-voltage power switch applications. For example, in high-voltage DC-DC converters, this MOSFET can be used to achieve efficient voltage conversion and current switching.
2. **Power management and control circuits**
- In power management circuits, such as power adapters and battery management systems, the low on-resistance and high voltage withstand capability of the FDT86246-VB enable it to effectively manage current and voltage, optimizing the system's power conversion and efficiency.
3. **Protection circuits**
- This MOSFET can be used in high-voltage protection circuits, such as overvoltage protection and overcurrent protection circuits. Its high drain-source voltage and low on-resistance characteristics ensure reliable protection under high voltage conditions.
4. **Motor drive**
- In motor drive applications, the FDT86246-VB can be used as a switch controller for the motor. It can handle higher voltages and provide stable current switching, making it suitable for control circuits for motor start-up and operation.
5. **Industrial equipment**
- In industrial equipment, the FDT86246-VB can be used in high-voltage switches and control modules, such as inverters and power management systems, to provide efficient switch control and protection.
The high voltage capability and low on-resistance of the FDT86246-VB make it an excellent choice for high performance and reliability in the fields of high-voltage power switching, power management, protection circuits, and motor drives.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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