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FDT86102LZ-VB Product details
Back to previous pageProduct introduction：
1. FDT86102LZ-VB Product Introduction
FDT86102LZ-VB is a high-performance N-channel MOSFET packaged in SOT223. This MOSFET adopts Trench technology, has excellent switching performance and low on-resistance, and can operate stably at a drain-source voltage of up to 100V. The low on-resistance (36mΩ@VGS=10V) and high drain current capability (6.4A) of FDT86102LZ-VB enable it to perform well in various power management and switch control applications. It is designed to provide high efficiency and reliability, and is suitable for circuits requiring high voltage and high current.
FDT86102LZ-VB is a high-performance N-channel MOSFET packaged in SOT223. This MOSFET adopts Trench technology, has excellent switching performance and low on-resistance, and can operate stably at a drain-source voltage of up to 100V. The low on-resistance (36mΩ@VGS=10V) and high drain current capability (6.4A) of FDT86102LZ-VB enable it to perform well in various power management and switch control applications. It is designed to provide high efficiency and reliability, and is suitable for circuits requiring high voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 6.4A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 6.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 6.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
2. Detailed parameter description of FDT86102LZ-VB
- **Package type**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 36mΩ @ VGS=10V
- **Maximum drain current (ID)**: 6.4A
- **Technology**: Trench technology
- **Maximum power consumption**: Depends on the specific application and thermal design.
- **Package type**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 36mΩ @ VGS=10V
- **Maximum drain current (ID)**: 6.4A
- **Technology**: Trench technology
- **Maximum power consumption**: Depends on the specific application and thermal design.
Domain and module applications：
III. Application Fields and Module Examples
1. **Power Switch**: The FDT86102LZ-VB provides efficient switching control in power switch applications. Due to its low on-resistance and high voltage withstand capability, this MOSFET is suitable for high voltage power switch modules, such as main switches and protection switches in power management systems, ensuring the stability and efficiency of the power system.
2. **Battery Management System**: In battery management systems, the FDT86102LZ-VB can be used as a switch controller for batteries. Its high voltage and current capabilities enable it to handle the high voltage requirements during battery charging and discharging, while maintaining low power consumption and high efficiency, making it suitable for battery protection and management modules.
3. **Load Switch**: The high drain current capability of the device makes it suitable for a variety of load switch applications. The FDT86102LZ-VB is able to efficiently control the switching operation of high voltage loads, and is suitable for load switch modules, motor drives, and power regulation circuits, providing reliable switching performance.
4. **Power amplifier**: In the power amplifier circuit, FDT86102LZ-VB can be used as a switching element to handle high voltage and current requirements. Its low on-resistance helps reduce power loss and improve the overall efficiency of the system. It is particularly suitable for high voltage power amplifiers and signal amplification applications.
In short, FDT86102LZ-VB is an N-channel MOSFET suitable for high voltage and high current applications. It is widely used in power switches, battery management, load switches and power amplifiers, providing efficient switching control and stable performance.
1. **Power Switch**: The FDT86102LZ-VB provides efficient switching control in power switch applications. Due to its low on-resistance and high voltage withstand capability, this MOSFET is suitable for high voltage power switch modules, such as main switches and protection switches in power management systems, ensuring the stability and efficiency of the power system.
2. **Battery Management System**: In battery management systems, the FDT86102LZ-VB can be used as a switch controller for batteries. Its high voltage and current capabilities enable it to handle the high voltage requirements during battery charging and discharging, while maintaining low power consumption and high efficiency, making it suitable for battery protection and management modules.
3. **Load Switch**: The high drain current capability of the device makes it suitable for a variety of load switch applications. The FDT86102LZ-VB is able to efficiently control the switching operation of high voltage loads, and is suitable for load switch modules, motor drives, and power regulation circuits, providing reliable switching performance.
4. **Power amplifier**: In the power amplifier circuit, FDT86102LZ-VB can be used as a switching element to handle high voltage and current requirements. Its low on-resistance helps reduce power loss and improve the overall efficiency of the system. It is particularly suitable for high voltage power amplifiers and signal amplification applications.
In short, FDT86102LZ-VB is an N-channel MOSFET suitable for high voltage and high current applications. It is widely used in power switches, battery management, load switches and power amplifiers, providing efficient switching control and stable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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