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FDT3N40-VB Product details
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FDT3N40-VB MOSFET Product Introduction
The FDT3N40-VB is a single N-channel MOSFET in SOT223 package, manufactured using Plannar technology. It has a drain-source voltage of 650V and a drain current capability of 4A, and is designed for high voltage switching and power management applications. Although its on-resistance is relatively high, it performs well in high voltage applications and can effectively handle high voltage power supplies and currents. The superior performance of the FDT3N40-VB makes it suitable for a variety of industrial and consumer electronics applications.
The FDT3N40-VB is a single N-channel MOSFET in SOT223 package, manufactured using Plannar technology. It has a drain-source voltage of 650V and a drain current capability of 4A, and is designed for high voltage switching and power management applications. Although its on-resistance is relatively high, it performs well in high voltage applications and can effectively handle high voltage power supplies and currents. The superior performance of the FDT3N40-VB makes it suitable for a variety of industrial and consumer electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 4A | 2000mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2500mΩ @ VGS=4.5V
- 2000mΩ @ VGS=10V
- **Drain current (ID)**: 4A
- **Technology type**: Plannar
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2500mΩ @ VGS=4.5V
- 2000mΩ @ VGS=10V
- **Drain current (ID)**: 4A
- **Technology type**: Plannar
Domain and module applications：
Application fields and modules
The high voltage characteristics of FDT3N40-VB MOSFET make it widely used in the following fields and modules:
1. **High voltage switch**: FDT3N40-VB is suitable for switching applications that require high voltage tolerance, such as in power switches, power converters and industrial equipment. Its 650V drain-source voltage capability enables it to handle high voltage loads and switching operations, suitable for power equipment and high voltage power management systems.
2. **Power management**: In power management systems, FDT3N40-VB can be used as a power switching element, such as in inverters and high-power power adapters. Although the on-resistance is high, its high voltage capability ensures reliability and stability in high power applications, suitable for power conversion and current control modules.
3. **Industrial power**: FDT3N40-VB can be applied to industrial power modules, such as power tools, motor drive systems and industrial control systems. Its high voltage capability enables it to cope with high voltage demands in industrial environments while ensuring reliable and durable switching performance.
4. **Consumer Electronics**: In some high-voltage consumer electronics, such as high-power power adapters and home appliances, the FDT3N40-VB can be used as a switching element to provide stable current control and high voltage tolerance. Although the on-resistance is higher, its high voltage performance is still its key advantage in these applications.
In summary, the FDT3N40-VB MOSFET, with its high voltage tolerance and stable switching performance, shows wide application potential in high voltage switching, power management, industrial power supplies, and some consumer electronics.
The high voltage characteristics of FDT3N40-VB MOSFET make it widely used in the following fields and modules:
1. **High voltage switch**: FDT3N40-VB is suitable for switching applications that require high voltage tolerance, such as in power switches, power converters and industrial equipment. Its 650V drain-source voltage capability enables it to handle high voltage loads and switching operations, suitable for power equipment and high voltage power management systems.
2. **Power management**: In power management systems, FDT3N40-VB can be used as a power switching element, such as in inverters and high-power power adapters. Although the on-resistance is high, its high voltage capability ensures reliability and stability in high power applications, suitable for power conversion and current control modules.
3. **Industrial power**: FDT3N40-VB can be applied to industrial power modules, such as power tools, motor drive systems and industrial control systems. Its high voltage capability enables it to cope with high voltage demands in industrial environments while ensuring reliable and durable switching performance.
4. **Consumer Electronics**: In some high-voltage consumer electronics, such as high-power power adapters and home appliances, the FDT3N40-VB can be used as a switching element to provide stable current control and high voltage tolerance. Although the on-resistance is higher, its high voltage performance is still its key advantage in these applications.
In summary, the FDT3N40-VB MOSFET, with its high voltage tolerance and stable switching performance, shows wide application potential in high voltage switching, power management, industrial power supplies, and some consumer electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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