FDT1600N10A-VB Product details
Product introduction:
The FDT1600N10A-VB is a single N-channel MOSFET in a SOT223 package designed for high voltage and medium current applications. The MOSFET operates stably with a drain-source voltage (VDS) up to 100V and is suitable for operation at a gate voltage (VGS) of ±20V. Its gate threshold voltage (Vth) is 1.8V, enabling it to turn on at lower gate voltages. The FDT1600N10A-VB has a relatively high on-resistance (RDS(ON)), which is 120mΩ at VGS=4.5V and 100mΩ at VGS=10V. Its maximum drain current (ID) is 5A, making it suitable for a variety of medium current applications. The MOSFET uses trench technology, providing good current handling capability and thermal stability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
- **Package type**: SOT223
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 120mΩ @ VGS = 4.5V
- 100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology type**: Trench
Domain and module applications:
The design features of FDT1600N10A-VB make it excel in multiple application fields. Here are some examples of applicable fields and modules:
1. **Power management**: In power management circuits, FDT1600N10A-VB can be used as a switching element to control the on/off state of the power supply, especially for occasions requiring high voltage and medium current. For example, it can be used for high-voltage switching in switching power supplies to ensure power supply stability and efficiency.
2. **DC-DC converter**: Due to its high drain-source voltage (VDS) and moderate on-resistance, FDT1600N10A-VB is suitable for use in DC-DC converters, especially in converter designs that require high voltage tolerance. This MOSFET can handle current efficiently and maintain conversion efficiency.
3. **Load switch**: The high voltage tolerance of this MOSFET makes it suitable for high voltage load switching, such as controlling motor loads, heating elements, etc. in home appliances and industrial equipment. It can effectively control load switching and protect the circuit.
4. **Motor drive**: FDT1600N10A-VB is also suitable for motor drive circuits, especially in motor drive applications that require high voltage operation, such as power tools, home appliance motors, etc. It can provide stable switching control to ensure reliable operation and performance of the motor.
These application examples show the wide applicability of FDT1600N10A-VB in various occasions requiring high voltage and medium current handling capabilities.
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