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FDT1600N10ALZ-VB Product details
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FDT1600N10ALZ-VB MOSFET Product Introduction
The FDT1600N10ALZ-VB is a single N-channel MOSFET in a SOT223 package, designed for high voltage and low power applications. The MOSFET supports a drain-source voltage (VDS) of up to 100V, capable of handling high voltage applications, while having a gate-source voltage (VGS) tolerance of ±20V, suitable for a wide operating voltage range. Its gate threshold voltage (Vth) is 1.8V, ensuring that it can be turned on at a relatively low gate voltage. The on-resistance (RDS(ON)) of the FDT1600N10ALZ-VB performs well at different gate voltages: it is 120mΩ when VGS is 4.5V, and it drops to 100mΩ when VGS is 10V. Its maximum drain current (ID) is 5A, enabling it to handle medium current loads. FDT1600N10ALZ-VB adopts trench technology, which provides lower switching loss and higher current control capability, and is very suitable for various power management and load switching applications.
The FDT1600N10ALZ-VB is a single N-channel MOSFET in a SOT223 package, designed for high voltage and low power applications. The MOSFET supports a drain-source voltage (VDS) of up to 100V, capable of handling high voltage applications, while having a gate-source voltage (VGS) tolerance of ±20V, suitable for a wide operating voltage range. Its gate threshold voltage (Vth) is 1.8V, ensuring that it can be turned on at a relatively low gate voltage. The on-resistance (RDS(ON)) of the FDT1600N10ALZ-VB performs well at different gate voltages: it is 120mΩ when VGS is 4.5V, and it drops to 100mΩ when VGS is 10V. Its maximum drain current (ID) is 5A, enabling it to handle medium current loads. FDT1600N10ALZ-VB adopts trench technology, which provides lower switching loss and higher current control capability, and is very suitable for various power management and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Package**: SOT223, compact package, suitable for high-density circuit board layout.
- **Configuration**: Single N-channel MOSFET, suitable for single-channel switching and control applications.
- **VDS (drain-source voltage)**: 100V, maximum voltage between drain and source.
- **VGS (gate-source voltage)**: ±20V, maximum voltage difference between gate and source.
- **Vth (gate threshold voltage)**: 1.8V, minimum gate voltage required for MOSFET to start conducting.
- **RDS(ON) (on-resistance)**:
- 120mΩ @ VGS = 4.5V
- 100mΩ @ VGS = 10V
- **ID (drain current)**: 5A, maximum continuous drain current.
- **Technology**: Trench technology optimizes switching performance and power efficiency.
- **Package**: SOT223, compact package, suitable for high-density circuit board layout.
- **Configuration**: Single N-channel MOSFET, suitable for single-channel switching and control applications.
- **VDS (drain-source voltage)**: 100V, maximum voltage between drain and source.
- **VGS (gate-source voltage)**: ±20V, maximum voltage difference between gate and source.
- **Vth (gate threshold voltage)**: 1.8V, minimum gate voltage required for MOSFET to start conducting.
- **RDS(ON) (on-resistance)**:
- 120mΩ @ VGS = 4.5V
- 100mΩ @ VGS = 10V
- **ID (drain current)**: 5A, maximum continuous drain current.
- **Technology**: Trench technology optimizes switching performance and power efficiency.
Domain and module applications：
Application Examples
The design and performance characteristics of the FDT1600N10ALZ-VB MOSFET make it widely used in the following fields and modules:
1. **Power Management**: In power management modules, the FDT1600N10ALZ-VB can be used as a switching component for high voltage applications, such as DC-DC converters and power protection circuits. Its low on-resistance and high voltage withstand capability help improve power efficiency and stability.
2. **Load Switch Application**: In load switch applications that require high current and high voltage control, such as power switches for computer power supplies, home appliances, and industrial equipment, the low switching losses and high current handling capabilities of the FDT1600N10ALZ-VB make it an ideal choice.
3. **Portable Electronic Devices**: In portable electronic devices, such as laptops and mobile devices, the FDT1600N10ALZ-VB can be used for battery management and power switching to improve system power efficiency and extend battery life.
4. **Communication Equipment**: In communication equipment such as routers and switches, the FDT1600N10ALZ-VB can be used as a power switch and load switch to ensure the stability and efficiency of the equipment under various working conditions. Its high voltage tolerance and low on-resistance help improve the overall performance of the equipment.
5. **Automotive Electronics**: In automotive electronic systems such as on-board chargers, on-board lighting, and power window controls, the FDT1600N10ALZ-VB provides high voltage tolerance and reliability to meet the challenges of the automotive environment. Its high efficiency characteristics help reduce power consumption and improve system stability.
The design and performance characteristics of the FDT1600N10ALZ-VB MOSFET make it widely used in the following fields and modules:
1. **Power Management**: In power management modules, the FDT1600N10ALZ-VB can be used as a switching component for high voltage applications, such as DC-DC converters and power protection circuits. Its low on-resistance and high voltage withstand capability help improve power efficiency and stability.
2. **Load Switch Application**: In load switch applications that require high current and high voltage control, such as power switches for computer power supplies, home appliances, and industrial equipment, the low switching losses and high current handling capabilities of the FDT1600N10ALZ-VB make it an ideal choice.
3. **Portable Electronic Devices**: In portable electronic devices, such as laptops and mobile devices, the FDT1600N10ALZ-VB can be used for battery management and power switching to improve system power efficiency and extend battery life.
4. **Communication Equipment**: In communication equipment such as routers and switches, the FDT1600N10ALZ-VB can be used as a power switch and load switch to ensure the stability and efficiency of the equipment under various working conditions. Its high voltage tolerance and low on-resistance help improve the overall performance of the equipment.
5. **Automotive Electronics**: In automotive electronic systems such as on-board chargers, on-board lighting, and power window controls, the FDT1600N10ALZ-VB provides high voltage tolerance and reliability to meet the challenges of the automotive environment. Its high efficiency characteristics help reduce power consumption and improve system stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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