Featured Model

Your present location > Home page > Featured Model

FDS9952A-NL-VB Product details

Product introduction:

Product Introduction

FDS9952A-NL-VB is a high-performance dual MOSFET in SOP8 package, configured with one N-channel and one P-channel MOSFET. The device is manufactured using Trench technology and is suitable for applications with high requirements for current control and switching efficiency. Its maximum drain-source voltage (VDS) is ±30V, providing a flexible voltage range to meet the needs of different voltage applications. The maximum drain current (ID) of this MOSFET is ±8A, which is suitable for medium current loads and has a low on-resistance, making it suitable for applications that require efficient power management.

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A 18/40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
Detailed parameter description

- **Model**: FDS9952A-NL-VB
- **Package**: SOP8
- **Configuration**: Dual MOSFET (N-channel + P-channel)
- **Maximum drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N-channel: 1.6V
- P-channel: -1.7V
- **On-resistance (RDS(ON))**:
- N-channel:
- 24mΩ @ VGS = 4.5V
- 18mΩ @ VGS = 10V
- P-channel:
- 50mΩ @ VGS = 4.5V
- 40mΩ @ VGS = 10V
- **Maximum drain current (ID)**: ±8A
- **Technology**: Trench technology

Domain and module applications:

Application fields and modules

FDS9952A-NL-VB excels in the following fields and modules:

1. **Power management**: Due to its dual MOSFET configuration, FDS9952A-NL-VB can be used as a switching component in power management circuits. For example, in bidirectional DC-DC converters, N-channel and P-channel MOSFETs can achieve efficient current control and power conversion. Its low on-resistance helps reduce power loss and improve efficiency.

2. **Motor drive**: In motor drive applications, this MOSFET can be used as a switching element in H-bridge circuits. Its dual MOSFET configuration allows bidirectional current control, which is suitable for motor forward and reverse control, providing stable drive current and efficient power conversion.

3. **Load switch**: FDS9952A-NL-VB is suitable for a variety of load switch applications, such as load switching, relay drive, and protection circuits. Its dual MOSFET design enables multiple switching functions to be provided in a single package, simplifies circuit design, and provides reliable switching performance.

4. **High-efficiency power switch**: In power modules and intelligent battery management systems that require high-efficiency power switches, the FDS9952A-NL-VB can provide good switching performance and low power loss. Its high switching speed and low on-resistance ensure efficient power conversion and are suitable for high-frequency switching applications.

These features make the FDS9952A-NL-VB an ideal choice for a variety of electronic applications that require dual MOSFET configurations and efficient power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat