Product introduction：
FDS9400A-NL-VB MOSFET Product Introduction
The FDS9400A-NL-VB is a single P-channel MOSFET in a SOP8 package, designed for high-efficiency low-voltage applications. Its design parameters ensure reliability and efficiency in a variety of power management applications. The MOSFET supports a drain-source voltage (VDS) of up to -30V and has a gate-source voltage (VGS) tolerance of ±20V, suitable for handling a wide operating voltage range. Its threshold voltage (Vth) is -1.7V, which means it can be easily turned on at a lower gate voltage. The on-resistance (RDS(ON)) of the FDS9400A-NL-VB performs well at different gate voltages: 56mΩ when VGS is 4.5V, and further reduced to 33mΩ when VGS is 10V. Its maximum drain current (ID) is -5.8A, suitable for handling low to medium current loads. The FDS9400A-NL-VB uses trench technology, has low switching losses and efficient current control capabilities, and is an ideal choice for a variety of portable electronic devices and power management applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-5.8A |
|
|
33mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-5.8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-5.8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description
- **Package**: SOP8, standard package for compact applications.
- **Configuration**: Single P-channel MOSFET, designed for single-channel switching applications.
- **VDS (drain-source voltage)**: -30V, maximum drain-to-source voltage.
- **VGS (gate-source voltage)**: ±20V, maximum voltage difference between gate and source.
- **Vth (gate threshold voltage)**: -1.7V, minimum gate voltage required for MOSFET to start conducting.
- **RDS(ON) (on-resistance)**:
- 56mΩ @ VGS = 4.5V
- 33mΩ @ VGS = 10V
- **ID (drain current)**: -5.8A, maximum continuous drain current.
- **Technology**: Trench technology, providing excellent conduction performance and switching efficiency.
Domain and module applications：
Application Examples
The design and performance characteristics of the FDS9400A-NL-VB MOSFET make it widely used in the following fields and modules:
1. **Power Management Module**: Due to its low on-resistance and medium current handling capability, the FDS9400A-NL-VB is an ideal choice in various power management modules, especially in scenarios that require efficient and low-power operation, such as DC-DC converters, regulators, and power switches.
2. **Portable Electronic Devices**: In portable devices such as smartphones and tablets, the FDS9400A-NL-VB can be used for battery management, load switching, and power switching. Its small package and high efficiency help extend battery life and improve the overall performance of the device.
3. **Load Switch Application**: The FDS9400A-NL-VB performs well in load switch applications that require fast response, such as power distribution systems in laptops and other consumer electronics. It can effectively reduce switching losses and provide more stable power control.
4. **Communication equipment**: In communication equipment such as routers and switches, this MOSFET can be used for power regulation and management to ensure stable operation of the system under various working conditions. Its efficient current control capability helps reduce the power consumption of the equipment and improve energy efficiency.
5. **Automotive electronics**: In automotive electronic systems such as on-board chargers, on-board lighting and sensor modules, the high reliability and low on-resistance of the FDS9400A-NL-VB ensure that it can provide stable performance in harsh environments while reducing the overall power consumption of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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