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FDS6912-NL-VB Product details

Product introduction:

FDS6912-NL-VB MOSFET Product Introduction

FDS6912-NL-VB is a dual-channel N-channel MOSFET with a SOP8 package type. The device has a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 1.7V. Its on-resistance (RDS(ON)) is 26mΩ at a VGS of 4.5V, and drops to 22mΩ at a VGS of 10V, and can support a continuous drain current (ID) of up to 6.8A (Channel 1) and 6.0A (Channel 2). The FDS6912-NL-VB uses Trench technology, providing excellent switching performance and low power consumption characteristics, and is suitable for high-efficiency switching needs in various electronic applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+N 30V 1.7V 6.8/6.0A 22mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+N 30V 1.7V 6.8/6.0A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+N 30V 1.7V 6.8/6.0A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+N
Detailed parameter description

- **Package type**: SOP8
- **Polarity configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 26mΩ @ VGS=4.5V
- 22mΩ @ VGS=10V
- **Drain current (ID)**:
- Channel 1: 6.8A
- Channel 2: 6.0A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power consumption (PD)**: 2.5W

Domain and module applications:

Application examples of applicable fields and modules

FDS6912-NL-VB MOSFET is suitable for the following fields and modules due to its dual-channel configuration, low on-resistance and high current handling capability:

1. **Power management**: In power management systems such as DC-DC converters, load switches and power distribution modules, the dual N-channel configuration of FDS6912-NL-VB allows multiple switching functions to be implemented in one package. Its low RDS(ON) characteristics help reduce power loss and improve system efficiency, making it particularly suitable for high-efficiency power management applications.

2. **Consumer electronics**: In consumer electronic devices such as smartphones, tablets, and laptops, FDS6912-NL-VB can be used for power switches, charging circuits, and battery management systems. The dual-channel configuration provides flexibility for complex power management and switch control, while the low power consumption characteristics optimize the overall performance and battery life of the device.

3. **Automotive electronics**: In automotive electronic systems, such as power windows, seat adjustment and lighting control, the dual-channel MOSFET design of FDS6912-NL-VB can handle a variety of switching tasks, providing high-efficiency and reliable switching control to meet the stringent requirements of the automotive environment.

4. **Industrial control**: In industrial automation and PLC systems, the dual-channel characteristics of FDS6912-NL-VB enable it to achieve switching control of multiple loads, improving the functionality and reliability of the system. It is suitable for driving multiple loads or performing complex switching control scenarios, ensuring precise operation and efficient operation.

With its dual-channel design and excellent electrical performance, the FDS6912-NL-VB MOSFET provides a reliable solution for a variety of high-efficiency applications, meeting the needs of modern electronic devices and systems for high-performance switches.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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