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FDS6681Z-VB Product details

Product introduction:

1. FDS6681Z-VB Product Introduction

FDS6681Z-VB is a P-channel MOSFET in SOP8 package. The device is designed for efficient current control and is suitable for use in a variety of low-voltage power management applications. Its main features include a rated drain-source voltage of -30V, a gate-source voltage range of ±20V, and a low on-resistance, providing excellent switching performance. Using Trench technology, the MOSFET is able to maintain a low on-resistance under higher current conditions, thereby improving the efficiency and stability of the overall circuit.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-P -30V -3V -18A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-P -30V -3V -18A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-P -30V -3V -18A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-P
2. Detailed parameter description of FDS6681Z-VB

- **Package type**: SOP8
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: -18A
- **Technology**: Trench technology
- **Maximum power consumption**: Based on the design and heat dissipation conditions, the device can work stably under higher power loads.

Domain and module applications:

III. Applications and Module Examples

1. **Power Management Circuit**: FDS6681Z-VB is suitable for power management systems, especially those requiring low on-resistance to reduce power loss. In power switches and load switches, its low RDS(ON) can effectively reduce energy waste and improve the overall efficiency of the system.

2. **Load Switch**: Due to its high current handling capability and low on-resistance, FDS6681Z-VB is an ideal load switch choice, providing reliable performance in a variety of switching applications, especially in high load and high frequency switching situations.

3. **DC-DC Converter**: In DC-DC converters, the low on-resistance of FDS6681Z-VB helps improve conversion efficiency and reduce heat generation, especially in the synchronous rectifier section, which can effectively improve the overall power conversion efficiency.

4. **Battery Management System**: This MOSFET can be used in battery protection and management systems to effectively handle high currents while ensuring the stability and safety of the battery during charging and discharging. Low on-resistance helps improve the efficiency of the battery management system and extend the battery life.

Through these application examples, it can be seen that FDS6681Z-VB has important application value in many fields such as power management, switch control, and efficient current processing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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