Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±60V |
|
1.8/-1.7V |
5.3/-4.9A |
|
|
26/55mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±60V |
|
1.8/-1.7V |
5.3/-4.9A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±60V |
|
1.8/-1.7V |
5.3/-4.9A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
FDS4897A-VB Detailed parameter description
- **Package**: SOP8
- **Configuration**: Bipolar MOSFET (N-type and P-type)
- **Drain-source voltage (VDS)**: ±60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N-type: 1.8V
- P-type: -1.7V
- **On-resistance (RDS(ON))**:
- N-type:
- 29mΩ @ VGS = 4.5V
- 26mΩ @ VGS = 10V
- P-type:
- 60mΩ @ VGS = 4.5V
- 55mΩ @ VGS = 10V
- **Drain current (ID)**:
- N Type: 5.3A
- P Type: -4.9A
- **Technology**: Trench
Domain and module applications:
Applications and module examples
1. **Power management**: The bipolar design of the FDS4897A-VB makes it very useful in power management systems. It can be used in efficient switching power supply designs to optimize the power conversion process by controlling positive and negative voltages. For example, in a switching power supply module, an N-type MOSFET can be used for positive voltage switching, while a P-type MOSFET can be used for negative voltage switching, thereby improving the overall conversion efficiency.
2. **H-bridge drive**: In an H-bridge drive circuit, the FDS4897A-VB can be used to drive a motor or other load. Its N-type and P-type MOSFET configuration enables flexible current direction control, improving the accuracy and efficiency of motor drive. This is very common in electric vehicles, power tools, and automation equipment.
3. **DC-DC converter**: In DC-DC converter applications, the low on-resistance of the FDS4897A-VB helps reduce power loss and improve conversion efficiency. Its bipolar MOSFET design allows for efficient operation in multiple voltage rails, making it suitable for a variety of power conversion needs.
4. **Overcurrent protection**: The bipolar nature of the FDS4897A-VB makes it suitable for overcurrent protection circuits. N-type and P-type MOSFETs can be used to design protection circuits to ensure that the circuit can respond quickly and protect other electronic components when an overcurrent condition occurs.
5. **Current switching and signal processing**: In applications that require precise control of current or signals, the high current handling capability and low on-resistance of the FDS4897A-VB can be used for a variety of switching and signal processing tasks. For example, it can be used in high-frequency switching applications such as switching regulation circuits and signal amplifiers to provide reliable performance.
These application examples demonstrate the wide applicability of the FDS4897A-VB in areas that require positive and negative voltage control and efficient current management. Its efficient Trench technology and bipolar design make it an ideal choice for a variety of power and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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