Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
|
18/40mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package type**: SOP8
- **Configuration**: Dual N+P channel
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **N-channel threshold voltage (Vth)**: 1.6V
- **P-channel threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- **N-channel**:
- 24mΩ @ VGS=4.5V
- 18mΩ @ VGS=10V
- **P-channel**:
- 50mΩ @ VGS=4.5V
- 40mΩ @ VGS=10V
- **Maximum drain current (ID)**: ±8A
- **Technology**: Trench
Domain and module applications:
Applicable fields and module examples:
1. **Bipolar power management**:
The dual N+P channel design of FDS4542-NL-VB is very suitable for bipolar power management systems. In such systems, N-channel MOSFETs are used to handle positive voltages, while P-channel MOSFETs handle negative voltages, which enables efficient power switching and voltage regulation control.
2. **DC-DC converter**:
In DC-DC converters, the low on-resistance characteristics of FDS4542-NL-VB are critical to improving conversion efficiency. The dual configuration of N-channel and P-channel MOSFETs allows for more precise current control and higher conversion efficiency, and is suitable for a variety of power conversion applications.
3. **Motor driver**:
This MOSFET can be used in motor drive circuits, especially in scenarios that require bipolar control. Its high current carrying capacity and low on-resistance ensure stable operation of the motor drive under high load conditions.
4. **Load switch**:
In load switch applications, the FDS4542-NL-VB is able to provide efficient switching control. Due to its dual design of N-channel and P-channel MOSFETs, it can handle bipolar currents and reduce switching losses, improving switching efficiency.
5. **Efficient power management**:
In efficient power management modules, the dual N+P channel design of the FDS4542-NL-VB enables it to maintain high efficiency when it needs to handle positive and negative voltages at the same time. Its low on-resistance and high current carrying capacity enable it to perform well in power management applications.
With its dual N+P channel configuration, low on-resistance and high current capability, the FDS4542-NL-VB MOSFET is suitable for various power management, DC-DC conversion, motor drive, load switches and power management modules, providing efficient and stable switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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