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FDPF8N50NZT-VB Product details
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Product Introduction: FDPF8N50NZT-VB
FDPF8N50NZT-VB is a high voltage N-type MOSFET packaged in TO220F. The device is based on Plannar technology and is designed for high voltage applications. It has a maximum drain-source voltage of 650V and a maximum drain current of 12A, and an on-resistance of 680mΩ at VGS=10V. The high voltage tolerance and moderate on-resistance of FDPF8N50NZT-VB make it excellent in situations where high voltage control is required, and it is suitable for various power supply and power management applications.
FDPF8N50NZT-VB is a high voltage N-type MOSFET packaged in TO220F. The device is based on Plannar technology and is designed for high voltage applications. It has a maximum drain-source voltage of 650V and a maximum drain current of 12A, and an on-resistance of 680mΩ at VGS=10V. The high voltage tolerance and moderate on-resistance of FDPF8N50NZT-VB make it excellent in situations where high voltage control is required, and it is suitable for various power supply and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 680mΩ @ VGS = 10V
- **Drain current (ID)**: 12A
- **Technology**: Plannar
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 680mΩ @ VGS = 10V
- **Drain current (ID)**: 12A
- **Technology**: Plannar
Domain and module applications：
Applications and modules
1. **High voltage switching power supply**: The FDPF8N50NZT-VB is suitable for high voltage switching power supplies and can handle voltages up to 650V. Although the on-resistance is relatively high, its design ensures that it is still effective in switching power supplies that require high voltage control. It can provide stable switching operation and operate reliably in high voltage environments.
2. **Power inverter**: In power inverter applications, the FDPF8N50NZT-VB can handle high voltage inputs and is suitable for equipment such as solar inverters and wind inverters. Its high voltage capability and medium current carrying capacity make it suitable for inverter switch control in high voltage environments.
3. **High voltage power amplifier**: This MOSFET can handle high voltage signals in high voltage power amplifiers. Despite its high on-resistance, its 650V withstand voltage capability makes it suitable for applications that handle high power signals, ensuring stable signal amplification.
4. **Power protection system**: In the power protection system, FDPF8N50NZT-VB acts as a high voltage switch to protect the power supply from high voltage shocks. Its high voltage withstand capability is suitable for power protection modules to ensure reliable switching control in the event of power anomalies.
5. **High voltage load switch**: This MOSFET is also suitable for high voltage load switching and is suitable for loads that require high voltage switch control. Its high voltage capability and reliability enable it to provide stable switching operation in high voltage load applications.
1. **High voltage switching power supply**: The FDPF8N50NZT-VB is suitable for high voltage switching power supplies and can handle voltages up to 650V. Although the on-resistance is relatively high, its design ensures that it is still effective in switching power supplies that require high voltage control. It can provide stable switching operation and operate reliably in high voltage environments.
2. **Power inverter**: In power inverter applications, the FDPF8N50NZT-VB can handle high voltage inputs and is suitable for equipment such as solar inverters and wind inverters. Its high voltage capability and medium current carrying capacity make it suitable for inverter switch control in high voltage environments.
3. **High voltage power amplifier**: This MOSFET can handle high voltage signals in high voltage power amplifiers. Despite its high on-resistance, its 650V withstand voltage capability makes it suitable for applications that handle high power signals, ensuring stable signal amplification.
4. **Power protection system**: In the power protection system, FDPF8N50NZT-VB acts as a high voltage switch to protect the power supply from high voltage shocks. Its high voltage withstand capability is suitable for power protection modules to ensure reliable switching control in the event of power anomalies.
5. **High voltage load switch**: This MOSFET is also suitable for high voltage load switching and is suitable for loads that require high voltage switch control. Its high voltage capability and reliability enable it to provide stable switching operation in high voltage load applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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