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FDPF680N10T-VB Product details
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1. Product Introduction
FDPF680N10T-VB is a high-performance single N-channel power MOSFET in a TO-220F package, designed for high voltage and high current applications. The MOSFET has a drain-source voltage (VDS) of 100V and can handle a continuous drain current (ID) of up to 50A. Its on-resistance (RDS(ON)) is 34mΩ at VGS=10V, and it uses Trench technology to provide low on-resistance and excellent switching performance. This makes the FDPF680N10T-VB very suitable for use in high-power and high-efficiency power electronics systems, especially in applications that require high voltage and high current handling.
FDPF680N10T-VB is a high-performance single N-channel power MOSFET in a TO-220F package, designed for high voltage and high current applications. The MOSFET has a drain-source voltage (VDS) of 100V and can handle a continuous drain current (ID) of up to 50A. Its on-resistance (RDS(ON)) is 34mΩ at VGS=10V, and it uses Trench technology to provide low on-resistance and excellent switching performance. This makes the FDPF680N10T-VB very suitable for use in high-power and high-efficiency power electronics systems, especially in applications that require high voltage and high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | 34mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 34mΩ @ VGS=10V
- **Continuous drain current (ID)**: 50A
- **Technology**: Trench
- **Thermal performance**: Excellent thermal management capability, suitable for high power applications
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 34mΩ @ VGS=10V
- **Continuous drain current (ID)**: 50A
- **Technology**: Trench
- **Thermal performance**: Excellent thermal management capability, suitable for high power applications
Domain and module applications：
III. Application Fields and Modules
FDPF680N10T-VB MOSFET is suitable for the following fields and modules due to its high voltage and high current handling capability, as well as low on-resistance:
1. **Power Management System**: In high voltage power management systems, such as power converters and switching power supplies, FDPF680N10T-VB can handle high voltage and high current loads, improving the efficiency and stability of the system.
2. **Industrial Motor Control**: In industrial motor control systems, this MOSFET can handle higher current and voltage loads, providing precise switching control and efficient motor drive.
3. **High Power Inverter**: In high power inverter applications, such as solar inverters or other high power inverter modules, FDPF680N10T-VB can handle high voltage conversion from DC to AC, ensuring efficient operation and reliability of the system.
4. **Automotive Electronic Systems**: In the power systems of electric and hybrid vehicles, this MOSFET can be used in high-power battery management systems and motor control modules, providing stable current control and low on-resistance, improving vehicle performance and efficiency.
5. **High-power Switching Power Supply**: In high-power switching power supplies, the FDPF680N10T-VB can efficiently handle high-power loads, reduce energy loss, and optimize system performance. It is widely used in data centers and server power modules.
The low on-resistance and high current handling capability of the FDPF680N10T-VB enable it to perform well in a variety of high-power applications and is a key component in power electronics systems.
FDPF680N10T-VB MOSFET is suitable for the following fields and modules due to its high voltage and high current handling capability, as well as low on-resistance:
1. **Power Management System**: In high voltage power management systems, such as power converters and switching power supplies, FDPF680N10T-VB can handle high voltage and high current loads, improving the efficiency and stability of the system.
2. **Industrial Motor Control**: In industrial motor control systems, this MOSFET can handle higher current and voltage loads, providing precise switching control and efficient motor drive.
3. **High Power Inverter**: In high power inverter applications, such as solar inverters or other high power inverter modules, FDPF680N10T-VB can handle high voltage conversion from DC to AC, ensuring efficient operation and reliability of the system.
4. **Automotive Electronic Systems**: In the power systems of electric and hybrid vehicles, this MOSFET can be used in high-power battery management systems and motor control modules, providing stable current control and low on-resistance, improving vehicle performance and efficiency.
5. **High-power Switching Power Supply**: In high-power switching power supplies, the FDPF680N10T-VB can efficiently handle high-power loads, reduce energy loss, and optimize system performance. It is widely used in data centers and server power modules.
The low on-resistance and high current handling capability of the FDPF680N10T-VB enable it to perform well in a variety of high-power applications and is a key component in power electronics systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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