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FDPF5N50-VB Product details
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Product Introduction
FDPF5N50-VB is a high voltage withstand N-type MOSFET in TO220F package. Its drain-source voltage (VDS) is up to 650V, suitable for applications requiring high voltage switching. The MOSFET supports a gate-source voltage (VGS) of ±30V and has a gate threshold voltage (Vth) of 3.5V. At VGS=10V, its on-resistance (RDS(ON)) is 1100mΩ and the maximum drain current (ID) is 7A. This MOSFET uses Plannar technology and is suitable for high voltage and high current applications.
FDPF5N50-VB is a high voltage withstand N-type MOSFET in TO220F package. Its drain-source voltage (VDS) is up to 650V, suitable for applications requiring high voltage switching. The MOSFET supports a gate-source voltage (VGS) of ±30V and has a gate threshold voltage (Vth) of 3.5V. At VGS=10V, its on-resistance (RDS(ON)) is 1100mΩ and the maximum drain current (ID) is 7A. This MOSFET uses Plannar technology and is suitable for high voltage and high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Parameter description
- **Package type**: TO220F
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1100mΩ @ VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Plannar
- **Package type**: TO220F
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1100mΩ @ VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Plannar
Domain and module applications：
Applications and module examples
1. **High voltage power switch**: FDPF5N50-VB is suitable for high voltage power switch applications, such as in high voltage DC-DC converters, where it can reliably switch high voltage power while keeping power consumption low.
2. **Power amplifier circuit**: In power amplifier circuits, this MOSFET is able to handle higher voltage loads and is suitable for applications that require high voltage and stable switching performance, such as audio amplifiers or RF amplifiers.
3. **Industrial power management**: In industrial power management systems, FDPF5N50-VB can be used for high voltage power conversion and distribution, and can withstand switching operations under high voltage conditions to improve system reliability and efficiency.
4. **High voltage power module**: This MOSFET can withstand voltages up to 650V in high voltage power modules and provides stable switching performance, making it suitable for use in high voltage power supply and conversion systems, such as uninterruptible power supplies (UPS) and power supply modules.
5. **Inverters and Power Converters**: In inverters and power converters, the high voltage withstand capability and reliability of the FDPF5N50-VB make it an ideal choice for handling high voltage loads, providing stable performance when converting and regulating high voltage power supplies.
The high voltage withstand capability, moderate on-resistance, and strong current carrying capacity of the FDPF5N50-VB make it an excellent choice for high voltage switching, power management, power amplification, and power conversion.
1. **High voltage power switch**: FDPF5N50-VB is suitable for high voltage power switch applications, such as in high voltage DC-DC converters, where it can reliably switch high voltage power while keeping power consumption low.
2. **Power amplifier circuit**: In power amplifier circuits, this MOSFET is able to handle higher voltage loads and is suitable for applications that require high voltage and stable switching performance, such as audio amplifiers or RF amplifiers.
3. **Industrial power management**: In industrial power management systems, FDPF5N50-VB can be used for high voltage power conversion and distribution, and can withstand switching operations under high voltage conditions to improve system reliability and efficiency.
4. **High voltage power module**: This MOSFET can withstand voltages up to 650V in high voltage power modules and provides stable switching performance, making it suitable for use in high voltage power supply and conversion systems, such as uninterruptible power supplies (UPS) and power supply modules.
5. **Inverters and Power Converters**: In inverters and power converters, the high voltage withstand capability and reliability of the FDPF5N50-VB make it an ideal choice for handling high voltage loads, providing stable performance when converting and regulating high voltage power supplies.
The high voltage withstand capability, moderate on-resistance, and strong current carrying capacity of the FDPF5N50-VB make it an excellent choice for high voltage switching, power management, power amplification, and power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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