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FDPF55N06-VB Product details
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Product Introduction
**FDPF55N06-VB** is a high-performance N-channel MOSFET packaged in TO220F. This MOSFET uses Trench technology and is designed for medium voltage applications. It has a drain-source voltage of 60V and an on-resistance as low as 10mΩ. Its high current handling capability and low on-resistance make it excellent in various power switching and power management applications, and is very suitable for occasions requiring high efficiency and high reliability.
**FDPF55N06-VB** is a high-performance N-channel MOSFET packaged in TO220F. This MOSFET uses Trench technology and is designed for medium voltage applications. It has a drain-source voltage of 60V and an on-resistance as low as 10mΩ. Its high current handling capability and low on-resistance make it excellent in various power switching and power management applications, and is very suitable for occasions requiring high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (V_DS)**: 60V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 2.5V
- **On-resistance (R_DS(on))**:
- 12mΩ (V_GS = 4.5V)
- 10mΩ (V_GS = 10V)
- **Maximum drain current (I_D)**: 70A
- **Technology**: Trench
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (V_DS)**: 60V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 2.5V
- **On-resistance (R_DS(on))**:
- 12mΩ (V_GS = 4.5V)
- 10mΩ (V_GS = 10V)
- **Maximum drain current (I_D)**: 70A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power switch**:
The 60V drain-source voltage and 70A current handling capability of the FDPF55N06-VB make it suitable for power switch applications. Its low on-resistance and high current capability make it an excellent performer in power converters, capable of handling high-power switching tasks and improving the overall efficiency of the system.
2. **Motor drive**:
In motor drive applications, this MOSFET provides high current capability and stable switching performance. Its low on-resistance ensures smooth operation of the motor under high load conditions, helping to improve the efficiency and reliability of the drive system.
3. **DC-DC converter**:
The FDPF55N06-VB can handle a high voltage of 60V and a current of 70A in DC-DC converters, making it suitable for high-efficiency power conversion. Its low on-resistance minimizes energy loss and improves the overall performance and stability of the converter.
4. **Automotive Electronics**:
The high current handling capability and low on-resistance of this MOSFET make it suitable for use in power switch modules in automotive electronic systems. For example, in battery management systems and power distribution systems in electric vehicles, the FDPF55N06-VB can provide efficient power control and protection.
5. **Industrial Power Management**:
In industrial power management applications, the FDPF55N06-VB can be used in a variety of devices that require high power switching. Its high voltage and current capabilities, combined with low on-resistance, provide a stable and reliable solution for industrial power systems.
With its high current handling capability, low on-resistance and medium voltage withstand capability, the FDPF55N06-VB is a key component in various power switching, power conversion and motor drive applications.
1. **Power switch**:
The 60V drain-source voltage and 70A current handling capability of the FDPF55N06-VB make it suitable for power switch applications. Its low on-resistance and high current capability make it an excellent performer in power converters, capable of handling high-power switching tasks and improving the overall efficiency of the system.
2. **Motor drive**:
In motor drive applications, this MOSFET provides high current capability and stable switching performance. Its low on-resistance ensures smooth operation of the motor under high load conditions, helping to improve the efficiency and reliability of the drive system.
3. **DC-DC converter**:
The FDPF55N06-VB can handle a high voltage of 60V and a current of 70A in DC-DC converters, making it suitable for high-efficiency power conversion. Its low on-resistance minimizes energy loss and improves the overall performance and stability of the converter.
4. **Automotive Electronics**:
The high current handling capability and low on-resistance of this MOSFET make it suitable for use in power switch modules in automotive electronic systems. For example, in battery management systems and power distribution systems in electric vehicles, the FDPF55N06-VB can provide efficient power control and protection.
5. **Industrial Power Management**:
In industrial power management applications, the FDPF55N06-VB can be used in a variety of devices that require high power switching. Its high voltage and current capabilities, combined with low on-resistance, provide a stable and reliable solution for industrial power systems.
With its high current handling capability, low on-resistance and medium voltage withstand capability, the FDPF55N06-VB is a key component in various power switching, power conversion and motor drive applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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