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FDPF52N20T-VB Product details
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1. Product Introduction
FDPF52N20T-VB is a high voltage single N-channel power MOSFET in TO-220F package. This MOSFET can withstand drain-source voltage (VDS) up to 200V and has a continuous drain current (ID) of 45A. Its on-resistance (RDS(ON)) is 38mΩ at VGS=10V, and it uses Trench technology to provide excellent switching performance and low on-resistance. FDPF52N20T-VB is suitable for high voltage and high current applications, and can provide stable and efficient performance in various power electronic systems.
FDPF52N20T-VB is a high voltage single N-channel power MOSFET in TO-220F package. This MOSFET can withstand drain-source voltage (VDS) up to 200V and has a continuous drain current (ID) of 45A. Its on-resistance (RDS(ON)) is 38mΩ at VGS=10V, and it uses Trench technology to provide excellent switching performance and low on-resistance. FDPF52N20T-VB is suitable for high voltage and high current applications, and can provide stable and efficient performance in various power electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 45A | 38mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 38mΩ @ VGS=10V
- **Continuous drain current (ID)**: 45A
- **Technology**: Trench
- **Thermal performance**: Excellent thermal management capability, suitable for high voltage applications
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 38mΩ @ VGS=10V
- **Continuous drain current (ID)**: 45A
- **Technology**: Trench
- **Thermal performance**: Excellent thermal management capability, suitable for high voltage applications
Domain and module applications：
3. Application fields and modules
FDPF52N20T-VB MOSFET is suitable for the following fields and modules due to its high voltage handling capability and good current carrying capacity:
1. **High voltage power management**: In power management systems that require high voltage processing, such as high voltage DC-DC converters and switching power supplies, FDPF52N20T-VB can efficiently handle 200V voltage, provide stable power output, and achieve efficient power conversion.
2. **Industrial power control**: In industrial power control systems, such as motor control modules and power conversion equipment, FDPF52N20T-VB can withstand high voltage loads and provide reliable switching control, improving the stability and durability of the equipment.
3. **Power inverter**: Suitable for high voltage power inverters, such as solar inverters and other high voltage inverter modules, this MOSFET can effectively convert high voltage DC to AC, improving the efficiency and reliability of the system.
4. **High Voltage Power Module**: In power modules that require high voltage carrying capacity, such as the power system of electric vehicles and high voltage power modules, the FDPF52N20T-VB can provide stable current control and low heat loss to optimize system performance.
5. **Switching Power Supply**: In high voltage switching power supplies, the FDPF52N20T-VB is able to handle high power loads, provide stable switching performance and efficient power management to ensure efficient operation of the system.
The high voltage handling capability and low on-resistance of the FDPF52N20T-VB make it excel in a variety of high voltage applications and is a key component in power electronics systems.
FDPF52N20T-VB MOSFET is suitable for the following fields and modules due to its high voltage handling capability and good current carrying capacity:
1. **High voltage power management**: In power management systems that require high voltage processing, such as high voltage DC-DC converters and switching power supplies, FDPF52N20T-VB can efficiently handle 200V voltage, provide stable power output, and achieve efficient power conversion.
2. **Industrial power control**: In industrial power control systems, such as motor control modules and power conversion equipment, FDPF52N20T-VB can withstand high voltage loads and provide reliable switching control, improving the stability and durability of the equipment.
3. **Power inverter**: Suitable for high voltage power inverters, such as solar inverters and other high voltage inverter modules, this MOSFET can effectively convert high voltage DC to AC, improving the efficiency and reliability of the system.
4. **High Voltage Power Module**: In power modules that require high voltage carrying capacity, such as the power system of electric vehicles and high voltage power modules, the FDPF52N20T-VB can provide stable current control and low heat loss to optimize system performance.
5. **Switching Power Supply**: In high voltage switching power supplies, the FDPF52N20T-VB is able to handle high power loads, provide stable switching performance and efficient power management to ensure efficient operation of the system.
The high voltage handling capability and low on-resistance of the FDPF52N20T-VB make it excel in a variety of high voltage applications and is a key component in power electronics systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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