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FDPF3N50NZ-VB Product details
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FDPF3N50NZ-VB MOSFET Product Introduction
The FDPF3N50NZ-VB is a high-voltage single N-channel MOSFET in a TO220F package designed for high-voltage applications. It can withstand drain-source voltages (VDS) up to 650V and has a gate-source voltage (VGS) range of ±30V. The threshold voltage (Vth) of this MOSFET is 3.5V, which is suitable for a variety of standard gate drive voltage conditions. Manufactured using Plannar technology, the FDPF3N50NZ-VB has an on-resistance (RDS(ON)) of 2560mΩ at VGS=10V and a maximum continuous drain current (ID) of 4A. Although the on-resistance is relatively high, its high voltage withstand characteristics make it valuable in certain high-voltage applications, especially when high-voltage loads need to be handled.
The FDPF3N50NZ-VB is a high-voltage single N-channel MOSFET in a TO220F package designed for high-voltage applications. It can withstand drain-source voltages (VDS) up to 650V and has a gate-source voltage (VGS) range of ±30V. The threshold voltage (Vth) of this MOSFET is 3.5V, which is suitable for a variety of standard gate drive voltage conditions. Manufactured using Plannar technology, the FDPF3N50NZ-VB has an on-resistance (RDS(ON)) of 2560mΩ at VGS=10V and a maximum continuous drain current (ID) of 4A. Although the on-resistance is relatively high, its high voltage withstand characteristics make it valuable in certain high-voltage applications, especially when high-voltage loads need to be handled.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type: ** TO220F
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **RDS(ON) @ VGS=10V: ** 2560mΩ
- **Continuous leakage current (ID): ** 4A
- **Technology: ** Plannar
- **Package type: ** TO220F
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **RDS(ON) @ VGS=10V: ** 2560mΩ
- **Continuous leakage current (ID): ** 4A
- **Technology: ** Plannar
Domain and module applications：
Applicable fields and modules
Despite the high on-resistance of FDPF3N50NZ-VB, its high withstand voltage characteristics make it valuable in the following fields and modules:
1. **High voltage power management:** Due to its 650V drain-source voltage, FDPF3N50NZ-VB is suitable for power management applications that require high voltage switching, such as high voltage switch-mode power supplies (SMPS). It is capable of handling high voltage loads, but in practical applications, it is necessary to pay attention to the impact of its high on-resistance on efficiency.
2. **High voltage protection circuit:** This MOSFET is suitable for high voltage protection circuits, such as overvoltage protection and voltage limiting circuits. Due to its high withstand voltage capability, it can protect the circuit from damage under high voltage fault conditions, ensuring the stability and safety of the system.
3. **High voltage switching applications:** In some specific high voltage switching applications, FDPF3N50NZ-VB can be used as a switching element, especially in scenarios where the switching speed requirements are not particularly high. Its high withstand voltage performance enables it to operate stably in high voltage environments.
4. **Industrial Power Systems:** This MOSFET can be used in certain industrial power systems that may experience higher voltage conditions. In these applications, despite its higher on-resistance, its high withstand voltage characteristics ensure the reliability of the system.
Despite the high on-resistance of FDPF3N50NZ-VB, its high withstand voltage characteristics make it valuable in the following fields and modules:
1. **High voltage power management:** Due to its 650V drain-source voltage, FDPF3N50NZ-VB is suitable for power management applications that require high voltage switching, such as high voltage switch-mode power supplies (SMPS). It is capable of handling high voltage loads, but in practical applications, it is necessary to pay attention to the impact of its high on-resistance on efficiency.
2. **High voltage protection circuit:** This MOSFET is suitable for high voltage protection circuits, such as overvoltage protection and voltage limiting circuits. Due to its high withstand voltage capability, it can protect the circuit from damage under high voltage fault conditions, ensuring the stability and safety of the system.
3. **High voltage switching applications:** In some specific high voltage switching applications, FDPF3N50NZ-VB can be used as a switching element, especially in scenarios where the switching speed requirements are not particularly high. Its high withstand voltage performance enables it to operate stably in high voltage environments.
4. **Industrial Power Systems:** This MOSFET can be used in certain industrial power systems that may experience higher voltage conditions. In these applications, despite its higher on-resistance, its high withstand voltage characteristics ensure the reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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