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FDPF18N50UT-VB Product details
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FDPF18N50UT-VB Product Introduction
FDPF18N50UT-VB is a high voltage single channel N-type MOSFET in TO220F package, designed for applications requiring high voltage and high reliability. This MOSFET has a drain-source voltage (VDS) of up to 650V and a drain current (ID) of 20A, and is manufactured using SJ_Multi-EPI technology. This technology enables the MOSFET to provide lower on-resistance (RDS(ON)) and higher stability at high voltage, making it ideal for use in high power and high voltage environments.
FDPF18N50UT-VB is a high voltage single channel N-type MOSFET in TO220F package, designed for applications requiring high voltage and high reliability. This MOSFET has a drain-source voltage (VDS) of up to 650V and a drain current (ID) of 20A, and is manufactured using SJ_Multi-EPI technology. This technology enables the MOSFET to provide lower on-resistance (RDS(ON)) and higher stability at high voltage, making it ideal for use in high power and high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
FDPF18N50UT-VB Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Package**: TO220F
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage power converter**: FDPF18N50UT-VB is suitable for high-voltage power converters, such as AC-DC converters and high-voltage DC-DC converters. Its high drain-source voltage and low on-resistance enable it to operate stably in high-voltage environments, improving the efficiency and reliability of the power conversion process.
2. **Power electronic equipment**: In power electronic equipment, such as high-voltage inverters and motor drives, FDPF18N50UT-VB can be used as a key switching component. Its high voltage tolerance and excellent switching performance enable it to effectively control power flow under high-voltage operating conditions, ensuring stable operation of the equipment.
3. **High-voltage lighting system**: This MOSFET is suitable for high-voltage lighting systems, such as switching control of high-voltage sodium lamps and metal halide lamps. Its high voltage handling capability and relatively low on-resistance enable it to reliably control lighting loads under high voltage and high current conditions.
4. **Industrial Power Management**: In industrial power management systems, such as high-voltage power management and power control modules, FDPF18N50UT-VB can be used as a high-voltage switch. Its high voltage and current handling capabilities ensure the stability and efficiency of the system in high-power applications.
These application examples demonstrate the superior performance of FDPF18N50UT-VB in high-voltage and high-power environments, especially its wide applicability in power conversion, power electronics, high-voltage lighting, and industrial power management.
1. **High-voltage power converter**: FDPF18N50UT-VB is suitable for high-voltage power converters, such as AC-DC converters and high-voltage DC-DC converters. Its high drain-source voltage and low on-resistance enable it to operate stably in high-voltage environments, improving the efficiency and reliability of the power conversion process.
2. **Power electronic equipment**: In power electronic equipment, such as high-voltage inverters and motor drives, FDPF18N50UT-VB can be used as a key switching component. Its high voltage tolerance and excellent switching performance enable it to effectively control power flow under high-voltage operating conditions, ensuring stable operation of the equipment.
3. **High-voltage lighting system**: This MOSFET is suitable for high-voltage lighting systems, such as switching control of high-voltage sodium lamps and metal halide lamps. Its high voltage handling capability and relatively low on-resistance enable it to reliably control lighting loads under high voltage and high current conditions.
4. **Industrial Power Management**: In industrial power management systems, such as high-voltage power management and power control modules, FDPF18N50UT-VB can be used as a high-voltage switch. Its high voltage and current handling capabilities ensure the stability and efficiency of the system in high-power applications.
These application examples demonstrate the superior performance of FDPF18N50UT-VB in high-voltage and high-power environments, especially its wide applicability in power conversion, power electronics, high-voltage lighting, and industrial power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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