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FDPF18N20FT_G-VB Product details
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Product Introduction
FDPF18N20FT_G-VB is a high-performance N-channel MOSFET in TO-220F package, designed for high voltage and medium current applications. It has a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V, suitable for use in environments that require high voltage and high current handling. Its on-resistance (RDS(ON)) is 58mΩ @ VGS=10V, and the maximum drain current (ID) is 20A. This MOSFET uses Trench technology, which provides excellent electrical performance and low on-resistance, suitable for a variety of applications requiring high voltage and efficient switching control.
FDPF18N20FT_G-VB is a high-performance N-channel MOSFET in TO-220F package, designed for high voltage and medium current applications. It has a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V, suitable for use in environments that require high voltage and high current handling. Its on-resistance (RDS(ON)) is 58mΩ @ VGS=10V, and the maximum drain current (ID) is 20A. This MOSFET uses Trench technology, which provides excellent electrical performance and low on-resistance, suitable for a variety of applications requiring high voltage and efficient switching control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | 58mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Trench
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **High-voltage power management**: FDPF18N20FT_G-VB is suitable for high-voltage power management systems such as power adapters, switching power supplies, and UPS systems. In these applications, its 200V high voltage withstand capability and low on-resistance ensure stable operation of the system under high voltage conditions, while reducing energy loss and improving overall efficiency.
2. **Motor drive**: This MOSFET performs well in motor drive applications such as motor controllers and inverters. Its high voltage handling capability and low on-resistance enable it to effectively control the start, run, and stop processes of the motor, and is suitable for motor drive scenarios that require high current and high voltage.
3. **Power converter**: In the field of power converters, such as DC-DC converters and AC-DC converters, the high voltage withstand capability and efficient switching characteristics of FDPF18N20FT_G-VB make it an ideal choice. Its low on-resistance and good electrical performance support efficient power conversion and stable output voltage.
4. **High Power Switch**: In high power switching applications such as welding equipment and power conversion systems, this MOSFET is capable of handling high voltage and high current loads. Its Trench technology provides excellent switching performance and reliable electrical characteristics, suitable for occasions requiring high power switch control.
FDPF18N20FT_G-VB is widely used in high voltage power management, motor drive, power converters and high power switches through its high voltage tolerance, low on-resistance and stable current handling performance, providing the high efficiency and reliability required under various voltage and power conditions.
1. **High-voltage power management**: FDPF18N20FT_G-VB is suitable for high-voltage power management systems such as power adapters, switching power supplies, and UPS systems. In these applications, its 200V high voltage withstand capability and low on-resistance ensure stable operation of the system under high voltage conditions, while reducing energy loss and improving overall efficiency.
2. **Motor drive**: This MOSFET performs well in motor drive applications such as motor controllers and inverters. Its high voltage handling capability and low on-resistance enable it to effectively control the start, run, and stop processes of the motor, and is suitable for motor drive scenarios that require high current and high voltage.
3. **Power converter**: In the field of power converters, such as DC-DC converters and AC-DC converters, the high voltage withstand capability and efficient switching characteristics of FDPF18N20FT_G-VB make it an ideal choice. Its low on-resistance and good electrical performance support efficient power conversion and stable output voltage.
4. **High Power Switch**: In high power switching applications such as welding equipment and power conversion systems, this MOSFET is capable of handling high voltage and high current loads. Its Trench technology provides excellent switching performance and reliable electrical characteristics, suitable for occasions requiring high power switch control.
FDPF18N20FT_G-VB is widely used in high voltage power management, motor drive, power converters and high power switches through its high voltage tolerance, low on-resistance and stable current handling performance, providing the high efficiency and reliability required under various voltage and power conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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