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FDPF16N50UT-VB Product details
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Product Introduction
FDPF16N50UT-VB is a high voltage N-type MOSFET with a TO220F package. This device is specially designed for high voltage applications, with a drain-source voltage (VDS) of 550V and a gate-source voltage (VGS) of ±30V. Its gate threshold voltage (Vth) is 3V, the on-resistance (RDS(ON)) is 260mΩ at VGS=10V, and the maximum drain current (ID) is 18A. FDPF16N50UT-VB uses Plannar technology and is suitable for switching and regulation applications that require high voltage tolerance and stable performance.
FDPF16N50UT-VB is a high voltage N-type MOSFET with a TO220F package. This device is specially designed for high voltage applications, with a drain-source voltage (VDS) of 550V and a gate-source voltage (VGS) of ±30V. Its gate threshold voltage (Vth) is 3V, the on-resistance (RDS(ON)) is 260mΩ at VGS=10V, and the maximum drain current (ID) is 18A. FDPF16N50UT-VB uses Plannar technology and is suitable for switching and regulation applications that require high voltage tolerance and stable performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Parameter description
- **Package type**: TO220F
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 550V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 260mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Plannar
- **Package type**: TO220F
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 550V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 260mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Plannar
Domain and module applications：
Applications and module examples
1. **High-voltage power switch**: FDPF16N50UT-VB is very suitable for high-voltage power switch applications due to its high drain-source voltage capability. It can provide reliable switching operation under high voltage conditions to ensure the stability and safety of the power system.
2. **Power adapter**: In the power adapter, this MOSFET can be used as a switching element in the high-voltage part to handle and regulate the voltage. Its high withstand voltage characteristics and moderate on-resistance help improve the efficiency and performance of the power adapter.
3. **Industrial power management**: For industrial power management systems, FDPF16N50UT-VB provides the necessary high voltage handling capability and stability for tasks such as power conversion, regulation and protection to ensure long-term and reliable operation of the power system.
4. **Inverter**: In inverter applications, such as solar inverters or other high-voltage inverters, this MOSFET can handle high voltage and high current loads to ensure the high efficiency and stability of the inverter under extreme conditions.
FDPF16N50UT-VB is suitable for use in various high voltage applications such as high voltage power switches, power adapters, industrial power management and inverters due to its superior high voltage tolerance and stable performance. These features ensure its reliability and efficiency in various complex and demanding power supply environments.
1. **High-voltage power switch**: FDPF16N50UT-VB is very suitable for high-voltage power switch applications due to its high drain-source voltage capability. It can provide reliable switching operation under high voltage conditions to ensure the stability and safety of the power system.
2. **Power adapter**: In the power adapter, this MOSFET can be used as a switching element in the high-voltage part to handle and regulate the voltage. Its high withstand voltage characteristics and moderate on-resistance help improve the efficiency and performance of the power adapter.
3. **Industrial power management**: For industrial power management systems, FDPF16N50UT-VB provides the necessary high voltage handling capability and stability for tasks such as power conversion, regulation and protection to ensure long-term and reliable operation of the power system.
4. **Inverter**: In inverter applications, such as solar inverters or other high-voltage inverters, this MOSFET can handle high voltage and high current loads to ensure the high efficiency and stability of the inverter under extreme conditions.
FDPF16N50UT-VB is suitable for use in various high voltage applications such as high voltage power switches, power adapters, industrial power management and inverters due to its superior high voltage tolerance and stable performance. These features ensure its reliability and efficiency in various complex and demanding power supply environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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