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FDN371N-VB Product details
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Product Introduction
**FDN371N-VB** is a high-performance N-channel MOSFET in SOT23-3 package, designed for miniaturized and high-efficiency electronic applications. Manufactured using Trench technology, this MOSFET performs well at low on-resistance and high current handling capability, suitable for a variety of high switching frequency and high current applications. Its compact package and excellent electrical performance make it an ideal choice for electronic products that require high efficiency and space saving.
**FDN371N-VB** is a high-performance N-channel MOSFET in SOT23-3 package, designed for miniaturized and high-efficiency electronic applications. Manufactured using Trench technology, this MOSFET performs well at low on-resistance and high current handling capability, suitable for a variety of high switching frequency and high current applications. Its compact package and excellent electrical performance make it an ideal choice for electronic products that require high efficiency and space saving.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 30V | 1.7V | 6.5A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 30V | 1.7V | 6.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 30V | 1.7V | 6.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Detailed parameter description
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(on))**:
- 33mΩ (V_GS = 4.5V)
- 30mΩ (V_GS = 10V)
- **Maximum drain current (I_D)**: 6.5A
- **Technology**: Trench
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(on))**:
- 33mΩ (V_GS = 4.5V)
- 30mΩ (V_GS = 10V)
- **Maximum drain current (I_D)**: 6.5A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Portable devices**:
Due to the compact package and high current capability of the FDN371N-VB, this MOSFET is ideal for use in portable devices such as smartphones, tablets, and other small electronic products. Its low on-resistance helps improve energy efficiency and reduce power consumption in the system.
2. **Low-power switch**:
In low-power switching applications, the high switching speed and low R_DS(on) characteristics of the FDN371N-VB can provide efficient switching performance, such as battery management systems and power switch modules, to help optimize power conversion efficiency.
3. **Battery-powered devices**:
The low on-resistance and high current handling capability of this MOSFET make it suitable for use in battery-powered devices such as portable power supplies and power tools. Its efficient current control helps improve the overall performance of the device and battery life.
4. **Small Electric Drive**:
In small electric drive systems, the high current carrying capacity and low R_DS(on) of FDN371N-VB enable it to effectively drive motors or other loads, providing reliable performance and stable output.
With its excellent electrical performance and compact package, FDN371N-VB meets the needs of electronic applications requiring high efficiency and miniaturization.
1. **Portable devices**:
Due to the compact package and high current capability of the FDN371N-VB, this MOSFET is ideal for use in portable devices such as smartphones, tablets, and other small electronic products. Its low on-resistance helps improve energy efficiency and reduce power consumption in the system.
2. **Low-power switch**:
In low-power switching applications, the high switching speed and low R_DS(on) characteristics of the FDN371N-VB can provide efficient switching performance, such as battery management systems and power switch modules, to help optimize power conversion efficiency.
3. **Battery-powered devices**:
The low on-resistance and high current handling capability of this MOSFET make it suitable for use in battery-powered devices such as portable power supplies and power tools. Its efficient current control helps improve the overall performance of the device and battery life.
4. **Small Electric Drive**:
In small electric drive systems, the high current carrying capacity and low R_DS(on) of FDN371N-VB enable it to effectively drive motors or other loads, providing reliable performance and stable output.
With its excellent electrical performance and compact package, FDN371N-VB meets the needs of electronic applications requiring high efficiency and miniaturization.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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