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FDN306P-VB Product details
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1. Product Introduction
FDN306P-VB is a high-efficiency single P-channel power MOSFET in a compact SOT23-3 package. This MOSFET is designed for -20V negative voltage applications and has excellent on-resistance and switching performance. It uses advanced Trench technology to provide low on-resistance under high current conditions, ensuring high efficiency and low power consumption operation. FDN306P-VB is suitable for a variety of low-voltage, high-efficiency electronic applications, especially in situations where miniaturization and high performance are required.
FDN306P-VB is a high-efficiency single P-channel power MOSFET in a compact SOT23-3 package. This MOSFET is designed for -20V negative voltage applications and has excellent on-resistance and switching performance. It uses advanced Trench technology to provide low on-resistance under high current conditions, ensuring high efficiency and low power consumption operation. FDN306P-VB is suitable for a variety of low-voltage, high-efficiency electronic applications, especially in situations where miniaturization and high performance are required.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -20V | -0.8V | -4A | 80mΩ | 60mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -20V | -0.8V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -20V | -0.8V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P |
2. Detailed parameter description
- **Package type**: SOT23-3
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.8V
- **On-resistance (RDS(ON))**:
- 80mΩ @ VGS=2.5V
- 65mΩ @ VGS=4.5V
- 60mΩ @ VGS=10V
- **Continuous drain current (ID)**: -4A
- **Technology**: Trench
- **Thermal performance**: Suitable for high-performance and compact design applications
- **Package type**: SOT23-3
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.8V
- **On-resistance (RDS(ON))**:
- 80mΩ @ VGS=2.5V
- 65mΩ @ VGS=4.5V
- 60mΩ @ VGS=10V
- **Continuous drain current (ID)**: -4A
- **Technology**: Trench
- **Thermal performance**: Suitable for high-performance and compact design applications
Domain and module applications：
3. Application fields and modules
Due to its low on-resistance and compact package, FDN306P-VB MOSFET is suitable for the following fields and modules:
1. **Low voltage power switch**: In low voltage power management systems, such as portable electronic devices and consumer electronics, FDN306P-VB can be used as an efficient power switch to provide reliable current control.
2. **Load switch**: Suitable for various low voltage load switch applications, such as battery-powered devices and power management modules, through its low on-resistance to achieve efficient current switching.
3. **Signal switch**: In applications that need to switch low voltage signals, such as audio equipment, communication equipment and sensor interfaces, FDN306P-VB can provide stable switching performance.
4. **Power management module**: In various power management modules, FDN306P-VB can effectively manage load current and reduce energy loss, improving the overall efficiency of the system.
FDN306P-VB is suitable for applications with strict requirements on space and power consumption due to its compact package and excellent performance, especially in low voltage circuits.
Due to its low on-resistance and compact package, FDN306P-VB MOSFET is suitable for the following fields and modules:
1. **Low voltage power switch**: In low voltage power management systems, such as portable electronic devices and consumer electronics, FDN306P-VB can be used as an efficient power switch to provide reliable current control.
2. **Load switch**: Suitable for various low voltage load switch applications, such as battery-powered devices and power management modules, through its low on-resistance to achieve efficient current switching.
3. **Signal switch**: In applications that need to switch low voltage signals, such as audio equipment, communication equipment and sensor interfaces, FDN306P-VB can provide stable switching performance.
4. **Power management module**: In various power management modules, FDN306P-VB can effectively manage load current and reduce energy loss, improving the overall efficiency of the system.
FDN306P-VB is suitable for applications with strict requirements on space and power consumption due to its compact package and excellent performance, especially in low voltage circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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