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FDN302P-VB Product details
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Product Introduction
FDN302P-VB is a single-channel P-type MOSFET in a SOT23-3 package, designed for low-voltage applications. Its drain-source voltage (VDS) is -20V and the gate-source voltage (VGS) is rated at ±12V. The device has a low gate threshold voltage (Vth) of -0.8V and is able to maintain good conduction performance at low gate drive voltages. The on-resistance (RDS(ON)) is 80mΩ, 65mΩ and 60mΩ, respectively, depending on the different values of VGS (2.5V, 4.5V and 10V). Its maximum drain current (ID) is -4A, and it uses advanced Trench technology to achieve high efficiency and low loss performance.
FDN302P-VB is a single-channel P-type MOSFET in a SOT23-3 package, designed for low-voltage applications. Its drain-source voltage (VDS) is -20V and the gate-source voltage (VGS) is rated at ±12V. The device has a low gate threshold voltage (Vth) of -0.8V and is able to maintain good conduction performance at low gate drive voltages. The on-resistance (RDS(ON)) is 80mΩ, 65mΩ and 60mΩ, respectively, depending on the different values of VGS (2.5V, 4.5V and 10V). Its maximum drain current (ID) is -4A, and it uses advanced Trench technology to achieve high efficiency and low loss performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -20V | -0.8V | -4A | 80mΩ | 60mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -20V | -0.8V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -20V | -0.8V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P |
Parameter description
- **Package type**: SOT23-3
- **Configuration**: Single channel P type
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Gate threshold voltage (Vth)**: -0.8V
- **On-resistance (RDS(ON))**:
- 80mΩ @ VGS=2.5V
- 65mΩ @ VGS=4.5V
- 60mΩ @ VGS=10V
- **Maximum drain current (ID)**: -4A
- **Technology**: Trench
- **Package type**: SOT23-3
- **Configuration**: Single channel P type
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Gate threshold voltage (Vth)**: -0.8V
- **On-resistance (RDS(ON))**:
- 80mΩ @ VGS=2.5V
- 65mΩ @ VGS=4.5V
- 60mΩ @ VGS=10V
- **Maximum drain current (ID)**: -4A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Low Voltage Power Switch**: The FDN302P-VB can be widely used in low voltage power switch and load switch applications. Its low on-resistance provides efficient current control at low gate voltage, suitable for switching functions in battery-powered portable devices and low voltage electronic products.
2. **Battery Protection**: In battery management systems, this MOSFET can be used as an overcurrent protection switch to help prevent overcurrent conditions from damaging the battery. Its low on-resistance and high current capability ensure that the protection circuit works reliably under overload conditions.
3. **Small Motor Drive**: Due to its smaller package and high current capability, the FDN302P-VB is ideal for use in small motor drive circuits. For example, motor control in toy motors and small appliances can use this MOSFET for efficient driving and switching.
4. **Consumer Electronics**: In consumer electronics such as mobile phones, tablets, and smart watches, this MOSFET can be used for power management and signal switching. Its small package and low on-resistance make it an excellent choice for applications where space is limited.
The FDN302P-VB's high efficiency and flexibility make it an ideal choice for a variety of low-voltage applications, meeting the demand for miniaturized, high-performance components in modern electronic designs.
1. **Low Voltage Power Switch**: The FDN302P-VB can be widely used in low voltage power switch and load switch applications. Its low on-resistance provides efficient current control at low gate voltage, suitable for switching functions in battery-powered portable devices and low voltage electronic products.
2. **Battery Protection**: In battery management systems, this MOSFET can be used as an overcurrent protection switch to help prevent overcurrent conditions from damaging the battery. Its low on-resistance and high current capability ensure that the protection circuit works reliably under overload conditions.
3. **Small Motor Drive**: Due to its smaller package and high current capability, the FDN302P-VB is ideal for use in small motor drive circuits. For example, motor control in toy motors and small appliances can use this MOSFET for efficient driving and switching.
4. **Consumer Electronics**: In consumer electronics such as mobile phones, tablets, and smart watches, this MOSFET can be used for power management and signal switching. Its small package and low on-resistance make it an excellent choice for applications where space is limited.
The FDN302P-VB's high efficiency and flexibility make it an ideal choice for a variety of low-voltage applications, meeting the demand for miniaturized, high-performance components in modern electronic designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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