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FDMS7670AS-VB Product details

Product introduction:

FDMS7670AS-VB MOSFET Product Introduction

The FDMS7670AS-VB is a high-performance single N-Channel MOSFET in a DFN8 (5x6) package. It is designed to provide low on-resistance and high current carrying capability to optimize power losses and improve system efficiency. With a maximum drain-source voltage (VDS) of 30V and a maximum continuous drain current (ID) of 120A, this MOSFET is suitable for applications requiring high power and low losses. Its threshold voltage (Vth) is 1.7V and gate-source voltage (VGS) is ±20V. It is manufactured using Trench technology, which gives it an extremely low on-resistance of 5mΩ at VGS = 4.5V and 3mΩ at VGS = 10V. These features make the FDMS7670AS-VB suitable for a variety of high-efficiency power management and switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 120A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
Detailed parameter description

- **Package:** DFN8 (5x6)
- **Configuration:** Single N-Channel
- **Drain-source voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 5mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **Continuous leakage current (ID):** 120A
- **Technology:** Trench

Domain and module applications:

Application fields and module examples

1. **High-efficiency DC-DC converters:** The low RDS(ON) and high current handling capability of the FDMS7670AS-VB make it ideal for use in high-efficiency DC-DC converters. This MOSFET can significantly reduce conversion losses and improve energy efficiency, especially in applications that require high current and low power consumption, such as power management in servers and data centers.

2. **Motor drive:** In motor drive applications, this MOSFET provides high current capability and low on-resistance, making it suitable for use as a switching device in half-bridge or full-bridge circuits. It can effectively improve the power efficiency of motor drive systems and is suitable for power tools, electric vehicles and other high-power motor drive applications.

3. **Power management system:** The FDMS7670AS-VB performs well in power management systems, especially in battery management and power protection modules. Due to its excellent switching performance and low on-resistance, it can effectively optimize the battery charging and discharging process and improve the overall performance and reliability of the system.

4. **Power Conversion Modules:** This MOSFET is also very suitable for various power conversion modules, such as switch mode power supplies (SMPS) and power factor correction (PFC) circuits. Its low on-resistance and high current capability help improve system efficiency and reduce heat loss.

The high efficiency and reliability of the FDMS7670AS-VB MOSFET make it an ideal choice for multiple demanding applications, providing designers with an effective solution for optimizing performance and power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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