Product introduction：
Product Introduction
**FDMS7608S-VB** is a high-performance half-bridge N-type MOSFET in a DFN8 (5x6)-C package. This device is designed for high-efficiency, high-current applications and is particularly suitable for half-bridge circuit configurations. Its maximum drain-source voltage (VDS) is 30V and its gate-source voltage (VGS) is ±20V. The turn-on voltage threshold (Vth) is 1.7V, which enables the MOSFET to turn on quickly at a lower gate voltage. Thanks to advanced trench technology, the MOSFET offers extremely low on-resistance (RDS(ON)), maintaining low power consumption even at higher currents. The FDMS7608S-VB is ideal for applications such as high-frequency switching power supplies, DC-DC converters, and motor drives.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
|
3.4mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6)-C |
Half-Bridge-N+N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type (Package): ** DFN8 (5x6)-C
- **Configuration (Configuration): ** Half-bridge N-type MOSFET (N+N-Channel)
- **Drain-source voltage (VDS): ** 30V
- **Gate-source voltage (VGS): ** ±20V
- **Turning voltage threshold (Vth): ** 1.7V
- **On-resistance (RDS(ON)): ** 4mΩ @ VGS = 4.5V; 3.4mΩ @ VGS = 10V
- **Continuous drain current (ID): ** 60A
- **Technology (Technology): ** Trench
Domain and module applications：
Application Fields and Module Examples
The superior performance of **FDMS7608S-VB** enables it to excel in the following fields and modules:
1. **High-Frequency Switching Power Supplies:** Due to its low on-resistance and high current handling capability, FDMS7608S-VB is very suitable for half-bridge configuration in high-frequency switching power supplies, improving system efficiency and reducing power consumption.
2. **DC-DC Converters:** In DC-DC converters, especially in synchronous rectifier scenarios, this MOSFET can provide efficient current transmission, reduce power loss, and improve overall conversion efficiency.
3. **Motor Drives:** In motor drive applications, FDMS7608S-VB can be used as a half-bridge driver to control and adjust the speed and direction of the motor, and is suitable for motor control systems in various industrial and consumer electronic devices.
4. **Power Amplifiers:** In power amplifier circuits, the low on-resistance and high current capability of the FDMS7608S-VB can help improve amplifier efficiency and reduce heat generation.
5. **Load Switching:** This MOSFET can be used in load switching circuits, providing fast switching speeds and high current capabilities, suitable for load switching applications in various electronic devices.
6. **Automotive Electronics:** In automotive electronic systems, the FDMS7608S-VB can be used for motor control, LED driving, and other high-efficiency switching applications, meeting the high reliability and high efficiency requirements of automotive systems.
**FDMS7608S-VB**'s low on-resistance and high current handling capabilities enable it to provide excellent performance and reliability in these demanding applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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