Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
28A |
|
|
16/40mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3)-C |
Half-Bridge-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
28A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
28A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3)-C |
Half-Bridge-N+N |
|
|
|
|
|
|
|
2. FDMC8200S-VB Detailed parameter description
- **Package type**: DFN8(3x3)-C
- **Configuration**: Half-bridge (N+N channel)
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- N1-MOSFET @ VGS = 4.5V: 22mΩ
- N2-MOSFET @ VGS = 4.5V: 45mΩ
- N1-MOSFET @ VGS = 10V: 16mΩ
- N2-MOSFET @ VGS = 10V: 40mΩ
- **Maximum drain current (ID)**: 28A
- **Technique**: Trench
Domain and module applications：
III. FDMC8200S-VB Application Fields and Modules
FDMC8200S-VB's high efficiency and low on-resistance make it excel in multiple fields:
1. **DC-DC Converter**: In DC-DC converter applications, the half-bridge configuration of FDMC8200S-VB makes it ideal for bridge switching circuits. Its low on-resistance and high current capability help improve conversion efficiency, making it suitable for efficient power management modules such as buck, boost or flyback converters.
2. **Power Management**: In power management systems, FDMC8200S-VB can be used as a switching element to help control current and improve system efficiency. Its high current handling capability and excellent switching performance make it suitable for high-power applications such as power switches and load switches.
3. **Electric Vehicle**: In the power system of electric vehicles, the high efficiency of FDMC8200S-VB helps optimize battery management and motor drive systems. Its low on-resistance and stable switching characteristics make it suitable for applications that require high-power switching, such as battery protection switches and motor drive modules.
4. **Power Amplifier**: In power amplifiers, the FDMC8200S-VB can be used as an efficient switching component to help improve the system's power transmission efficiency and reduce power consumption. Its half-bridge configuration is particularly suitable for use in power amplifiers and Class D amplifiers.
The FDMC8200S-VB combines advanced Trench technology, half-bridge configuration, and high current handling capabilities, making it the preferred MOSFET solution for high-power, high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page-C.png)
