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FDI8441_F085-VB Product details
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FDI8441_F085-VB MOSFET Product Introduction
The FDI8441_F085-VB is a high-performance N-Channel MOSFET designed for high current switching and power management applications. It uses a TO262 package, providing excellent heat dissipation and robust mechanical properties. The MOSFET supports a drain-source voltage (VDS) of up to 40V and a continuous drain current (ID) of up to 100A. Manufactured using Trench technology, the FDI8441_F085-VB has an extremely low on-resistance, which can effectively reduce power losses and is suitable for applications requiring high current and high efficiency.
The FDI8441_F085-VB is a high-performance N-Channel MOSFET designed for high current switching and power management applications. It uses a TO262 package, providing excellent heat dissipation and robust mechanical properties. The MOSFET supports a drain-source voltage (VDS) of up to 40V and a continuous drain current (ID) of up to 100A. Manufactured using Trench technology, the FDI8441_F085-VB has an extremely low on-resistance, which can effectively reduce power losses and is suitable for applications requiring high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package: ** TO262
- **Configuration: ** Single N-Channel
- **Drain-source voltage (VDS): ** 40V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 2.5V
- **On-resistance (RDS(ON)): ** 5mΩ @ VGS = 10V
- **Continuous leakage current (ID): ** 100A
- **Technology: ** Trench
- **Package: ** TO262
- **Configuration: ** Single N-Channel
- **Drain-source voltage (VDS): ** 40V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 2.5V
- **On-resistance (RDS(ON)): ** 5mΩ @ VGS = 10V
- **Continuous leakage current (ID): ** 100A
- **Technology: ** Trench
Domain and module applications：
Application fields and module examples
1. **High current switching applications:** The high drain-source voltage and extremely low on-resistance of FDI8441_F085-VB make it very suitable for high current switching applications. It can efficiently handle large currents in various high-power switching circuits and improve the overall efficiency of the system.
2. **Power management system:** This MOSFET is an ideal choice in power management systems, such as DC-DC converters and power distribution modules. Its low on-resistance can significantly reduce power losses, provide efficient power conversion and stable power output.
3. **Electric vehicles and battery management:** In electric vehicles and battery management systems, FDI8441_F085-VB can efficiently switch currents, help achieve precise battery management and power control, ensure efficient operation of the battery and extend its life.
4. **LED Driver:** Due to its low on-resistance and high current capability, the FDI8441_F085-VB is suitable for use in high-power LED drivers. It can stably provide large currents to ensure the brightness and stability of the LEDs while improving the overall efficiency of the driver.
The high current handling capability, low on-resistance, and TO262 package of the FDI8441_F085-VB make it an excellent performer in high-power and high-current applications, and is a key component in switch and power management systems that require high efficiency and reliability.
1. **High current switching applications:** The high drain-source voltage and extremely low on-resistance of FDI8441_F085-VB make it very suitable for high current switching applications. It can efficiently handle large currents in various high-power switching circuits and improve the overall efficiency of the system.
2. **Power management system:** This MOSFET is an ideal choice in power management systems, such as DC-DC converters and power distribution modules. Its low on-resistance can significantly reduce power losses, provide efficient power conversion and stable power output.
3. **Electric vehicles and battery management:** In electric vehicles and battery management systems, FDI8441_F085-VB can efficiently switch currents, help achieve precise battery management and power control, ensure efficient operation of the battery and extend its life.
4. **LED Driver:** Due to its low on-resistance and high current capability, the FDI8441_F085-VB is suitable for use in high-power LED drivers. It can stably provide large currents to ensure the brightness and stability of the LEDs while improving the overall efficiency of the driver.
The high current handling capability, low on-resistance, and TO262 package of the FDI8441_F085-VB make it an excellent performer in high-power and high-current applications, and is a key component in switch and power management systems that require high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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