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FDI3632-VB Product details
Back to previous pageProduct introduction：
1. FDI3632-VB Product Introduction
FDI3632-VB is a high-performance N-channel MOSFET in TO-262 package. This MOSFET uses Trench technology and is designed to handle high voltage and high current applications. FDI3632-VB supports a maximum drain-source voltage (VDS) of 100V and a drain current (ID) of up to 100A, making it suitable for high-power and high-efficiency switching applications. Its low on-resistance (10mΩ @ VGS = 4.5V and 9mΩ @ VGS = 10V) helps reduce power losses and improve the overall performance and reliability of the system.
FDI3632-VB is a high-performance N-channel MOSFET in TO-262 package. This MOSFET uses Trench technology and is designed to handle high voltage and high current applications. FDI3632-VB supports a maximum drain-source voltage (VDS) of 100V and a drain current (ID) of up to 100A, making it suitable for high-power and high-efficiency switching applications. Its low on-resistance (10mΩ @ VGS = 4.5V and 9mΩ @ VGS = 10V) helps reduce power losses and improve the overall performance and reliability of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
2. FDI3632-VB Detailed parameter description
- **Package type**: TO-262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 9mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Package type**: TO-262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 9mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
3. FDI3632-VB Application Fields and Modules
The high voltage and high current handling capabilities of FDI3632-VB enable it to excel in multiple fields and modules:
1. **High Power Switch**: In high power switching applications, FDI3632-VB can effectively handle currents up to 100A, and its low on-resistance (9mΩ @ VGS = 10V) helps reduce power consumption. This makes this MOSFET suitable for applications such as power switches and inverters that require high current and high efficiency.
2. **DC-DC Converter**: In DC-DC converters, the high current capability and low on-resistance characteristics of FDI3632-VB enable it to provide high-efficiency voltage conversion. It can effectively handle the high power requirements during the conversion process, ensuring the efficiency and stability of the power converter.
3. **Motor Driver**: In motor drivers, the FDI3632-VB offers high current handling capability and low power consumption for high-power motor control. Its drain current up to 100A and low on-resistance enable it to stably drive high-power motors, providing reliable control and protection.
4. **Power Management System**: In power management systems, such as power regulators and battery management systems, the high current and high voltage characteristics of the FDI3632-VB support high efficiency and stability of the power supply. Its low on-resistance and strong current handling capability ensure high efficiency and reliability of the system.
The FDI3632-VB is a high-performance N-channel MOSFET suitable for a variety of application scenarios requiring high current, high voltage and high efficiency, providing excellent switching performance and power management capabilities.
The high voltage and high current handling capabilities of FDI3632-VB enable it to excel in multiple fields and modules:
1. **High Power Switch**: In high power switching applications, FDI3632-VB can effectively handle currents up to 100A, and its low on-resistance (9mΩ @ VGS = 10V) helps reduce power consumption. This makes this MOSFET suitable for applications such as power switches and inverters that require high current and high efficiency.
2. **DC-DC Converter**: In DC-DC converters, the high current capability and low on-resistance characteristics of FDI3632-VB enable it to provide high-efficiency voltage conversion. It can effectively handle the high power requirements during the conversion process, ensuring the efficiency and stability of the power converter.
3. **Motor Driver**: In motor drivers, the FDI3632-VB offers high current handling capability and low power consumption for high-power motor control. Its drain current up to 100A and low on-resistance enable it to stably drive high-power motors, providing reliable control and protection.
4. **Power Management System**: In power management systems, such as power regulators and battery management systems, the high current and high voltage characteristics of the FDI3632-VB support high efficiency and stability of the power supply. Its low on-resistance and strong current handling capability ensure high efficiency and reliability of the system.
The FDI3632-VB is a high-performance N-channel MOSFET suitable for a variety of application scenarios requiring high current, high voltage and high efficiency, providing excellent switching performance and power management capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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