FDI150N10-VB Product details
Product introduction:
FDI150N10-VB is a high-performance N-channel MOSFET packaged in TO262, using Trench technology, designed to handle high current and medium voltage applications. It has a high drain-source voltage and excellent conduction performance, which makes it perform well in various power and switching applications. The 100V drain-source voltage (VDS) and 100A drain current (ID) of the FDI150N10-VB allow it to operate stably in applications requiring high current and voltage. Its low on-resistance and high current handling capability make it an ideal choice in high-performance electronic devices.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
- **Model**: FDI150N10-VB
- **Package**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 9mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications:
FDI150N10-VB MOSFET is widely used in the following fields and modules due to its high current handling capability and low on-resistance:
1. **Power Management**: In DC-DC converters and power adapters, FDI150N10-VB is able to effectively handle high current switching tasks. Its low RDS(ON) reduces power dissipation in high current applications, improves system efficiency and stability, and is suitable for high-efficiency power modules.
2. **Motor Drive**: In motor drive applications, this MOSFET is able to provide stable high current switching functions. Its 100A ID and low on-resistance make it suitable for high-power motor drive and control systems, ensuring efficient and reliable motor drive.
3. **High Power Switch**: In high power switching applications such as power distribution systems and high power switching power supplies, FDI150N10-VB is able to stably handle high voltage and high current switching tasks. Its high withstand voltage and low on-resistance make it an ideal choice for handling high-power switching.
4. **Automotive electronics**: In automotive electronic systems, the FDI150N10-VB can be used for power switching and power management modules. Its high current and high voltage capabilities make it suitable for providing reliable current switching and control functions in automotive electrical systems.
5. **Industrial control**: In industrial automation and control systems, the FDI150N10-VB can be used for switching and controlling high-power loads. Its high current handling capability and low on-resistance make it suitable for current switching and power management applications in industrial equipment.
In general, the FDI150N10-VB is widely used in power management, motor drive, high-power switching, automotive electronics, and industrial control with its high current and high voltage handling capabilities, providing efficient and stable current switching solutions.
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