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FDI040N06-VB Product details
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Product Introduction
The FDI040N06-VB is a high-performance single N-type MOSFET in a TO262 package. This MOSFET is designed for high-current, high-efficiency switching applications, with a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V handling capability. Its threshold voltage (Vth) is 3.5V, and it uses advanced trench technology to provide low on-resistance and high current handling capability. The on-resistance (RDS(ON)) of the FDI040N06-VB is 2.8mΩ at a VGS of 10V, and the maximum drain current (ID) is 210A. These features make it ideal for power management and switching applications that require high current and high efficiency.
The FDI040N06-VB is a high-performance single N-type MOSFET in a TO262 package. This MOSFET is designed for high-current, high-efficiency switching applications, with a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V handling capability. Its threshold voltage (Vth) is 3.5V, and it uses advanced trench technology to provide low on-resistance and high current handling capability. The on-resistance (RDS(ON)) of the FDI040N06-VB is 2.8mΩ at a VGS of 10V, and the maximum drain current (ID) is 210A. These features make it ideal for power management and switching applications that require high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package type**: TO262
- **Channel configuration**: Single N type
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2.8mΩ @ VGS=10V
- **Drain current (ID)**: 210A
- **Technology**: Trench
- **Package type**: TO262
- **Channel configuration**: Single N type
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2.8mΩ @ VGS=10V
- **Drain current (ID)**: 210A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
The high current handling capability and low on-resistance of the FDI040N06-VB enable it to excel in a number of areas:
1. **Power Management Systems**: In power management systems, the low on-resistance and high current handling capability of the FDI040N06-VB enable it to effectively control current flow and power switching, making it suitable for use in high-power power converters, power regulators, and battery management systems.
2. **Electric Vehicles and Power Systems**: For electric vehicles and other power systems, this MOSFET is able to handle high currents, making it suitable for use in motor drives, battery switching, and power conversion applications, providing efficient current control and stable performance.
3. **High Power Switching Applications**: In switching applications that require high current and low power consumption, such as power modules, inverters, and power amplifiers, the FDI040N06-VB is able to provide excellent switching performance and efficiency, reducing power consumption and improving system reliability.
4. **Industrial power and control systems**: In industrial power and control systems, the high current handling capability and low on-resistance of FDI040N06-VB make it suitable for applications such as power switching, overcurrent protection and motor control, ensuring efficient and stable operation of the system.
In general, the 60V drain-source voltage, 210A drain current and 2.8mΩ low on-resistance of FDI040N06-VB make it very suitable for switching and control applications that require high efficiency and high current, providing excellent performance and reliability.
The high current handling capability and low on-resistance of the FDI040N06-VB enable it to excel in a number of areas:
1. **Power Management Systems**: In power management systems, the low on-resistance and high current handling capability of the FDI040N06-VB enable it to effectively control current flow and power switching, making it suitable for use in high-power power converters, power regulators, and battery management systems.
2. **Electric Vehicles and Power Systems**: For electric vehicles and other power systems, this MOSFET is able to handle high currents, making it suitable for use in motor drives, battery switching, and power conversion applications, providing efficient current control and stable performance.
3. **High Power Switching Applications**: In switching applications that require high current and low power consumption, such as power modules, inverters, and power amplifiers, the FDI040N06-VB is able to provide excellent switching performance and efficiency, reducing power consumption and improving system reliability.
4. **Industrial power and control systems**: In industrial power and control systems, the high current handling capability and low on-resistance of FDI040N06-VB make it suitable for applications such as power switching, overcurrent protection and motor control, ensuring efficient and stable operation of the system.
In general, the 60V drain-source voltage, 210A drain current and 2.8mΩ low on-resistance of FDI040N06-VB make it very suitable for switching and control applications that require high efficiency and high current, providing excellent performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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