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FDI038AN06AO-VB Product details
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1. FDI038AN06AO-VB Product Introduction
FDI038AN06AO-VB is a high-performance N-channel MOSFET packaged in TO262. It has a drain-source voltage (VDS) rating of 60V and is suitable for medium voltage switching and drive applications. This MOSFET uses Trench technology to provide extremely low on-resistance (RDS(ON)), which can effectively reduce power loss and improve the overall efficiency of the system. Its maximum drain current (ID) of up to 210A enables it to handle high power loads. FDI038AN06AO-VB is an ideal choice for applications requiring high current and low power loss, such as power management and motor drive systems.
FDI038AN06AO-VB is a high-performance N-channel MOSFET packaged in TO262. It has a drain-source voltage (VDS) rating of 60V and is suitable for medium voltage switching and drive applications. This MOSFET uses Trench technology to provide extremely low on-resistance (RDS(ON)), which can effectively reduce power loss and improve the overall efficiency of the system. Its maximum drain current (ID) of up to 210A enables it to handle high power loads. FDI038AN06AO-VB is an ideal choice for applications requiring high current and low power loss, such as power management and motor drive systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
2. FDI038AN06AO-VB Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 3mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 3mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
Domain and module applications：
3. FDI038AN06AO-VB Application Fields and Modules
1. **High Power Power Switch**: FDI038AN06AO-VB performs well in high power power switch applications. Its low on-resistance and high drain current capability enable it to efficiently handle high power loads and is widely used in high power switching power supplies, DC-DC converters and power management modules. This MOSFET can effectively improve the energy efficiency of the system, reduce power loss, and ensure the stability and reliability of the power system.
2. **Motor Drive**: In motor drive systems, FDI038AN06AO-VB is suitable for high current motor control applications such as inverters and servo motor drives. Its high current handling capability and low on-resistance can meet the driving requirements of high power motors, provide precise motor control and efficient driving performance, and are widely used in industrial automation and electric vehicles.
3. **Power Inverter**: This MOSFET is also suitable for power inverters, especially in solar inverters and wind power generation systems. Its high voltage tolerance and low power loss characteristics enable it to efficiently convert and manage power, ensuring stable operation of the system under various working conditions.
4. **Battery Management System**: In the battery management system, FDI038AN06AO-VB can effectively control the charging and discharging process of the battery. Its high current handling capability and low power loss ensure efficient management and protection of the battery, and it is widely used in electric vehicles and energy storage systems to improve the overall efficiency and safety of the system.
1. **High Power Power Switch**: FDI038AN06AO-VB performs well in high power power switch applications. Its low on-resistance and high drain current capability enable it to efficiently handle high power loads and is widely used in high power switching power supplies, DC-DC converters and power management modules. This MOSFET can effectively improve the energy efficiency of the system, reduce power loss, and ensure the stability and reliability of the power system.
2. **Motor Drive**: In motor drive systems, FDI038AN06AO-VB is suitable for high current motor control applications such as inverters and servo motor drives. Its high current handling capability and low on-resistance can meet the driving requirements of high power motors, provide precise motor control and efficient driving performance, and are widely used in industrial automation and electric vehicles.
3. **Power Inverter**: This MOSFET is also suitable for power inverters, especially in solar inverters and wind power generation systems. Its high voltage tolerance and low power loss characteristics enable it to efficiently convert and manage power, ensuring stable operation of the system under various working conditions.
4. **Battery Management System**: In the battery management system, FDI038AN06AO-VB can effectively control the charging and discharging process of the battery. Its high current handling capability and low power loss ensure efficient management and protection of the battery, and it is widely used in electric vehicles and energy storage systems to improve the overall efficiency and safety of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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