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FDI030N06-VB Product details
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FDI030N06-VB MOSFET Product Introduction
FDI030N06-VB is a high-performance single N-channel MOSFET packaged in TO262. This MOSFET has a drain-source voltage (VDS) of up to 60V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3.5V, and it can be turned on at a lower gate voltage. The on-resistance (RDS(ON)) of FDI030N06-VB is 2.8mΩ when VGS is 10V, providing very low conduction losses. Its maximum continuous drain current (ID) is 210A, and it uses trench technology, which gives the MOSFET high current carrying capacity and excellent switching performance, making it suitable for applications requiring high current and high switching frequency.
FDI030N06-VB is a high-performance single N-channel MOSFET packaged in TO262. This MOSFET has a drain-source voltage (VDS) of up to 60V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3.5V, and it can be turned on at a lower gate voltage. The on-resistance (RDS(ON)) of FDI030N06-VB is 2.8mΩ when VGS is 10V, providing very low conduction losses. Its maximum continuous drain current (ID) is 210A, and it uses trench technology, which gives the MOSFET high current carrying capacity and excellent switching performance, making it suitable for applications requiring high current and high switching frequency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
FDI030N06-VB MOSFET Detailed parameter description
- **Package type**: TO262
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2.8mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 210A
- **Technology**: Trench
- **Input capacitance (Ciss)**: Low
- **Output capacitance (Coss)**: Low
- **Reverse recovery time (trr)**: Short
- **Power consumption**: Low conduction loss and high switching efficiency
- **Operating temperature range**: -55°C to +150°C
- **Package type**: TO262
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2.8mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 210A
- **Technology**: Trench
- **Input capacitance (Ciss)**: Low
- **Output capacitance (Coss)**: Low
- **Reverse recovery time (trr)**: Short
- **Power consumption**: Low conduction loss and high switching efficiency
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Applications and module examples of FDI030N06-VB
The high current handling capability and low on-resistance of FDI030N06-VB MOSFET make it suitable for multiple power electronics applications that require high current and high switching frequency. Here are some typical application areas:
1. **Power converters and inverters**:
- **Application examples**: In solar inverters and battery energy storage systems, FDI030N06-VB can be used as an efficient switching element for current control and conversion. Its low on-resistance can reduce energy loss and improve the overall efficiency of the system.
2. **High power switching power supply**:
- **Application examples**: In server power supplies and high power power adapters, the high current carrying capability and low RDS(ON) of FDI030N06-VB can optimize the performance of the power supply and improve the stability and efficiency of the power supply.
3. **Battery Management System (BMS)**:
- **Application Examples**: In battery management systems, FDI030N06-VB is used for battery switches and protection circuits to control the charging and discharging process of battery packs. Its high current handling capability can effectively ensure the safety and reliability of the system, especially in electric vehicles and large energy storage systems.
4. **Electric Drive System**:
- **Application Examples**: In electric vehicles and industrial motor drive systems, FDI030N06-VB can be used in motor control modules to provide efficient current control. Its high current capability and low on-resistance can improve the performance and energy efficiency of the drive system.
5. **High Frequency Switching Application**:
- **Application Examples**: This MOSFET is suitable for high frequency switching power supplies and RF power amplifiers. In these applications, the low on-resistance and fast switching characteristics of FDI030N06-VB can provide efficient switching control to meet high frequency working requirements.
In summary, FDI030N06-VB MOSFET provides excellent current handling capability and switching performance, and is widely used in high-power and high-efficiency power electronic systems to help improve the overall performance and reliability of the system.
The high current handling capability and low on-resistance of FDI030N06-VB MOSFET make it suitable for multiple power electronics applications that require high current and high switching frequency. Here are some typical application areas:
1. **Power converters and inverters**:
- **Application examples**: In solar inverters and battery energy storage systems, FDI030N06-VB can be used as an efficient switching element for current control and conversion. Its low on-resistance can reduce energy loss and improve the overall efficiency of the system.
2. **High power switching power supply**:
- **Application examples**: In server power supplies and high power power adapters, the high current carrying capability and low RDS(ON) of FDI030N06-VB can optimize the performance of the power supply and improve the stability and efficiency of the power supply.
3. **Battery Management System (BMS)**:
- **Application Examples**: In battery management systems, FDI030N06-VB is used for battery switches and protection circuits to control the charging and discharging process of battery packs. Its high current handling capability can effectively ensure the safety and reliability of the system, especially in electric vehicles and large energy storage systems.
4. **Electric Drive System**:
- **Application Examples**: In electric vehicles and industrial motor drive systems, FDI030N06-VB can be used in motor control modules to provide efficient current control. Its high current capability and low on-resistance can improve the performance and energy efficiency of the drive system.
5. **High Frequency Switching Application**:
- **Application Examples**: This MOSFET is suitable for high frequency switching power supplies and RF power amplifiers. In these applications, the low on-resistance and fast switching characteristics of FDI030N06-VB can provide efficient switching control to meet high frequency working requirements.
In summary, FDI030N06-VB MOSFET provides excellent current handling capability and switching performance, and is widely used in high-power and high-efficiency power electronic systems to help improve the overall performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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