Product introduction：
FDG6335N-VB MOSFET Product Introduction
FDG6335N-VB is a dual N-channel MOSFET in SC70-6 package. The drain-source voltage (VDS) of this MOSFET is 20V, and the gate-source voltage (VGS) is ±12V, which is suitable for low-voltage applications. Its threshold voltage (Vth) ranges from 0.5V to 1.5V, ensuring that it can be turned on at a lower gate voltage. The on-resistance (RDS(ON)) of FDG6335N-VB is 110mΩ at VGS of 2.5V and 86mΩ at VGS of 4.5V, providing efficient current conduction capability. The maximum continuous drain current (ID) is 2.6A. Using trench technology, this MOSFET provides good switching performance and a compact package, suitable for applications with space constraints.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-6 |
Dual-N+N |
20V |
|
0.5~1.5V |
2.6A |
110mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-6 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC70-6 |
Dual-N+N |
20V |
|
0.5~1.5V |
2.6A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC70-6 |
Dual-N+N |
20V |
|
0.5~1.5V |
2.6A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-6 |
Dual-N+N |
|
|
|
|
|
|
|
FDG6335N-VB MOSFET Detailed parameter description
- **Package type**: SC70-6
- **Polarity**: Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 110mΩ @ VGS = 2.5V
- 86mΩ @ VGS = 4.5V
- **Maximum continuous drain current (ID)**: 2.6A
- **Technology**: Trench
- **Input capacitance (Ciss)**: Low
- **Output capacitance (Coss)**: Low
- **Reverse recovery time (trr)**: short
- **Power dissipation**: low conduction loss and high switching efficiency
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Application fields and module examples of FDG6335N-VB
The compact package and excellent electrical characteristics of FDG6335N-VB MOSFET make it suitable for a variety of low-voltage, high-efficiency applications. Here are some typical application areas:
1. **Portable electronic devices**: Due to its compact SC70-6 package, FDG6335N-VB is suitable for space-constrained portable electronic devices such as smartphones, tablets and mobile power supplies. In these devices, MOSFETs can be used for power management, battery switching and protection circuits, helping to save space and improve system efficiency.
2. **Low-power switching power supply**: FDG6335N-VB is suitable for low-power switching power supply designs such as LED drivers and small power adapters. Its low on-resistance and high switching efficiency can optimize power supply performance and improve overall energy efficiency, making it suitable for low-voltage applications.
3. **Battery Management System (BMS)**: In battery management systems, FDG6335N-VB can be used for battery switches and protection circuits. Its efficient switching performance and small size are suitable for lithium-ion battery management, chargers, and other battery pack controls to improve system reliability and safety.
4. **Consumer Electronics**: This MOSFET is also suitable for a variety of consumer electronics products, such as home appliances and small power tools. In these applications, FDG6335N-VB can act as a load switch and power controller to help achieve efficient power management and reliable operation.
5. **Automotive Electronics**: In the field of automotive electronics, FDG6335N-VB can be used in low-voltage automotive control systems, such as LED lights and on-board chargers. Its compact package and excellent electrical performance meet the high space and performance requirements of automotive electronic systems.
In summary, the FDG6335N-VB MOSFET provides excellent switching performance and compact packaging, suitable for a variety of low-voltage and high-efficiency electronic applications, and can effectively improve the performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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