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FDD8N50NZTM-VB Product details
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FDD8N50NZTM-VB MOSFET Product Introduction
FDD8N50NZTM-VB is a high-voltage single N-channel MOSFET in TO252 package. Its drain-source voltage (VDS) reaches 650V, and the gate-source voltage (VGS) withstands ±30V, which is designed for high-voltage applications. The threshold voltage (Vth) of this MOSFET is 3.5V, ensuring that it can be effectively turned on under appropriate gate voltage. When VGS is 10V, the on-resistance (RDS(ON)) of FDD8N50NZTM-VB is 700mΩ, and the maximum continuous drain current (ID) is 7A. It adopts SJ_Multi-EPI technology, has high voltage resistance and stability, and is suitable for power electronics applications requiring high voltage and high reliability.
FDD8N50NZTM-VB is a high-voltage single N-channel MOSFET in TO252 package. Its drain-source voltage (VDS) reaches 650V, and the gate-source voltage (VGS) withstands ±30V, which is designed for high-voltage applications. The threshold voltage (Vth) of this MOSFET is 3.5V, ensuring that it can be effectively turned on under appropriate gate voltage. When VGS is 10V, the on-resistance (RDS(ON)) of FDD8N50NZTM-VB is 700mΩ, and the maximum continuous drain current (ID) is 7A. It adopts SJ_Multi-EPI technology, has high voltage resistance and stability, and is suitable for power electronics applications requiring high voltage and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FDD8N50NZTM-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Input capacitance (Ciss)**: Moderate
- **Output capacitance (Coss)**: Moderate
- **Reverse recovery time (trr)**: Moderate
- **Power consumption**: Moderate Conduction loss and switching efficiency
- **Operating temperature range**: -55°C to +150°C
- **Package type**: TO252
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Input capacitance (Ciss)**: Moderate
- **Output capacitance (Coss)**: Moderate
- **Reverse recovery time (trr)**: Moderate
- **Power consumption**: Moderate Conduction loss and switching efficiency
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Application fields and module examples of FDD8N50NZTM-VB
FDD8N50NZTM-VB MOSFET is suitable for a variety of high voltage power electronics applications due to its high voltage capability and high current carrying capacity. Here are some typical application scenarios:
1. **High voltage switching power supply**: In high voltage switching power supply systems, such as high power DC-DC converters and AC-DC power supply modules, FDD8N50NZTM-VB can handle voltages up to 650V and is suitable for power conversion and protection circuits. The high voltage resistance and stability of this MOSFET make it excel in complex power management applications.
2. **Motor drive control**: In motor drive systems, FDD8N50NZTM-VB can be used as a switching element for high voltage motor controllers. Especially in electric vehicles and industrial motor drives, its high voltage handling capability and stable performance can effectively control and drive high voltage motors, ensuring system reliability and efficiency.
3. **Load switch**: In high voltage load switch applications, the FDD8N50NZTM-VB can be used for load control and power switching. For example, in industrial equipment and high voltage home appliances, it can withstand high voltage loads and provide stable switching functions.
4. **Power management system**: In various power management systems, including battery management systems (BMS) and energy storage systems, the FDD8N50NZTM-VB is able to handle high voltage and current, and is suitable for battery charge and discharge control and power protection to ensure efficient and safe operation of the system.
5. **High voltage LED lighting**: In high voltage LED lighting drivers, the FDD8N50NZTM-VB is able to stably provide high voltage and current, and is suitable for applications such as commercial lighting and street lighting. Its high voltage resistance performance can cope with high voltage operating environments.
In summary, the FDD8N50NZTM-VB MOSFET provides high voltage and high current handling capabilities, suitable for a variety of high voltage and high power power electronics applications, and can effectively improve the performance and reliability of the system.
FDD8N50NZTM-VB MOSFET is suitable for a variety of high voltage power electronics applications due to its high voltage capability and high current carrying capacity. Here are some typical application scenarios:
1. **High voltage switching power supply**: In high voltage switching power supply systems, such as high power DC-DC converters and AC-DC power supply modules, FDD8N50NZTM-VB can handle voltages up to 650V and is suitable for power conversion and protection circuits. The high voltage resistance and stability of this MOSFET make it excel in complex power management applications.
2. **Motor drive control**: In motor drive systems, FDD8N50NZTM-VB can be used as a switching element for high voltage motor controllers. Especially in electric vehicles and industrial motor drives, its high voltage handling capability and stable performance can effectively control and drive high voltage motors, ensuring system reliability and efficiency.
3. **Load switch**: In high voltage load switch applications, the FDD8N50NZTM-VB can be used for load control and power switching. For example, in industrial equipment and high voltage home appliances, it can withstand high voltage loads and provide stable switching functions.
4. **Power management system**: In various power management systems, including battery management systems (BMS) and energy storage systems, the FDD8N50NZTM-VB is able to handle high voltage and current, and is suitable for battery charge and discharge control and power protection to ensure efficient and safe operation of the system.
5. **High voltage LED lighting**: In high voltage LED lighting drivers, the FDD8N50NZTM-VB is able to stably provide high voltage and current, and is suitable for applications such as commercial lighting and street lighting. Its high voltage resistance performance can cope with high voltage operating environments.
In summary, the FDD8N50NZTM-VB MOSFET provides high voltage and high current handling capabilities, suitable for a variety of high voltage and high power power electronics applications, and can effectively improve the performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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