FDD8876-VB Product details
Product introduction:
FDD8876-VB is a high-performance N-channel MOSFET packaged in TO-252. This MOSFET uses advanced Trench technology and is designed for high current and low on-resistance applications. Its rated drain-source voltage is 30V and it can handle drain currents up to 100A, making it suitable for electronic devices that require high efficiency and high power. The low on-resistance of FDD8876-VB (3mΩ @ VGS = 4.5V and 2mΩ @ VGS = 10V) ensures the lowest power consumption and optimal power efficiency during switching, making it an ideal choice for high-efficiency power management and switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications:
The high current and low on-resistance characteristics of FDD8876-VB make it outstanding in multiple fields and modules:
1. **Power management**: In high-performance power management systems such as DC-DC converters, synchronous rectification circuits and voltage regulators, the low on-resistance (2mΩ @ VGS = 10V) of FDD8876-VB significantly reduces power consumption and improves power efficiency. Its high current handling capability (100A) makes it suitable for use in high-power power modules to ensure efficient operation of the system.
2. **Power tools and drives**: With the ability to handle currents up to 100A, FDD8876-VB is an ideal choice for power tools and electric motor drives. Its low on-resistance and high switching speed improve the responsiveness and overall efficiency of the tool and reduce energy loss.
3. **Automotive electronics**: In automotive electronic systems, such as on-board battery management systems, electric drive modules, and on-board chargers, the FDD8876-VB provides stable high current support and high performance. Its low power consumption and high reliability characteristics enable it to operate stably in the complex environment of the car, ensuring the reliability and stability of the electronic system.
4. **Consumer electronics**: The FDD8876-VB is also widely used in consumer electronic devices such as laptops, smartphones, and other electronic products. Its high conductivity and low power consumption characteristics enhance the performance of the device, extend battery life, and improve the user experience of the product.
The FDD8876-VB is an excellent high current, low on-resistance MOSFET that is widely used and performs well in high-efficiency power management and switching applications.
Technical support:
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