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FDD8782-VB Product details
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Product Introduction
The FDD8782-VB is a high-performance single-channel N-type MOSFET in a TO-252 package. Designed for high current and high efficiency switching applications, this MOSFET is capable of handling drain-source voltages (VDS) up to 30V and gate-source voltages (VGS) of ±20V. Its threshold voltage (Vth) is 1.7V, and it uses advanced trench technology to achieve low on-resistance. The on-resistance (RDS(ON)) of the FDD8782-VB is 9mΩ at a VGS of 4.5V and is as low as 7mΩ at a VGS of 10V, with a maximum drain current (ID) of up to 70A. This feature makes it ideal for switching applications that require high current and high efficiency.
The FDD8782-VB is a high-performance single-channel N-type MOSFET in a TO-252 package. Designed for high current and high efficiency switching applications, this MOSFET is capable of handling drain-source voltages (VDS) up to 30V and gate-source voltages (VGS) of ±20V. Its threshold voltage (Vth) is 1.7V, and it uses advanced trench technology to achieve low on-resistance. The on-resistance (RDS(ON)) of the FDD8782-VB is 9mΩ at a VGS of 4.5V and is as low as 7mΩ at a VGS of 10V, with a maximum drain current (ID) of up to 70A. This feature makes it ideal for switching applications that require high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO-252
- **Channel configuration**: Single N type
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
- **Package type**: TO-252
- **Channel configuration**: Single N type
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
The high current handling capability and low on-resistance of the FDD8782-VB enable it to excel in multiple fields and modules:
1. **Power switch module**: In power switch applications, the low on-resistance of the FDD8782-VB helps reduce power consumption and heat generation, making it an ideal choice for high-efficiency DC-DC converters and switch mode power supplies (SMPS). It can switch current efficiently and provide stable and reliable power output.
2. **Motor drive**: In motor drive applications, the high current carrying capability and low on-resistance of this MOSFET make it ideal for high-current motor control, providing smooth motor startup and operation. Whether in industrial motor control or power tools, the FDD8782-VB can ensure high efficiency and reliability.
3. **Power amplifier**: For power amplifier circuits that require high current and low power consumption, the high current capability and low on-resistance of FDD8782-VB enable it to effectively amplify signals and reduce power consumption, suitable for applications such as audio amplifiers and RF equipment.
4. **Switching power supply system**: In switching power supply systems, FDD8782-VB can be used as an efficient switching element, especially in low voltage and high current applications, providing reliable performance and efficient current control. For example, it can be used for power distribution and load switch control.
In general, the 30V drain-source voltage, 70A drain current and low on-resistance of FDD8782-VB make it very suitable for switching applications that require high current and high efficiency, providing excellent switching performance and energy efficiency.
The high current handling capability and low on-resistance of the FDD8782-VB enable it to excel in multiple fields and modules:
1. **Power switch module**: In power switch applications, the low on-resistance of the FDD8782-VB helps reduce power consumption and heat generation, making it an ideal choice for high-efficiency DC-DC converters and switch mode power supplies (SMPS). It can switch current efficiently and provide stable and reliable power output.
2. **Motor drive**: In motor drive applications, the high current carrying capability and low on-resistance of this MOSFET make it ideal for high-current motor control, providing smooth motor startup and operation. Whether in industrial motor control or power tools, the FDD8782-VB can ensure high efficiency and reliability.
3. **Power amplifier**: For power amplifier circuits that require high current and low power consumption, the high current capability and low on-resistance of FDD8782-VB enable it to effectively amplify signals and reduce power consumption, suitable for applications such as audio amplifiers and RF equipment.
4. **Switching power supply system**: In switching power supply systems, FDD8782-VB can be used as an efficient switching element, especially in low voltage and high current applications, providing reliable performance and efficient current control. For example, it can be used for power distribution and load switch control.
In general, the 30V drain-source voltage, 70A drain current and low on-resistance of FDD8782-VB make it very suitable for switching applications that require high current and high efficiency, providing excellent switching performance and energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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