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FDD8770-VB Product details
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FDD8770-VB MOSFET Product Introduction
FDD8770-VB is a high current, low on-resistance single N-channel MOSFET in TO252 package. Its drain-source voltage (VDS) is 20V and the gate-source voltage (VGS) is ±20V, which is suitable for low-voltage power electronic applications. The threshold voltage (Vth) of this MOSFET is in the range of 0.5V to 1.5V, ensuring that it can effectively conduct at lower gate voltages. The on-resistance (RDS(ON)) of FDD8770-VB is 6mΩ at VGS of 2.5V and 4.5mΩ at VGS of 4.5V. It has extremely low conduction losses and excellent current handling capabilities, with a maximum continuous drain current (ID) of 100A. Using advanced trench technology, FDD8770-VB provides excellent switching performance and thermal stability, and is very suitable for low-voltage applications requiring high current and high efficiency.
FDD8770-VB is a high current, low on-resistance single N-channel MOSFET in TO252 package. Its drain-source voltage (VDS) is 20V and the gate-source voltage (VGS) is ±20V, which is suitable for low-voltage power electronic applications. The threshold voltage (Vth) of this MOSFET is in the range of 0.5V to 1.5V, ensuring that it can effectively conduct at lower gate voltages. The on-resistance (RDS(ON)) of FDD8770-VB is 6mΩ at VGS of 2.5V and 4.5mΩ at VGS of 4.5V. It has extremely low conduction losses and excellent current handling capabilities, with a maximum continuous drain current (ID) of 100A. Using advanced trench technology, FDD8770-VB provides excellent switching performance and thermal stability, and is very suitable for low-voltage applications requiring high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FDD8770-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
- **Input capacitance (Ciss)**: Low
- **Output capacitance (Coss)**: Low
- **Reverse recovery time (trr)**: Short
- **Power dissipation**: Low conduction losses and high switching efficiency
- **Operating temperature range**: -55°C to +150°C
- **Package type**: TO252
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
- **Input capacitance (Ciss)**: Low
- **Output capacitance (Coss)**: Low
- **Reverse recovery time (trr)**: Short
- **Power dissipation**: Low conduction losses and high switching efficiency
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Application fields and module examples of FDD8770-VB
FDD8770-VB MOSFET is very suitable for the following low-voltage power electronics applications due to its high current handling capability and low on-resistance:
1. **Power management**: In power management systems, FDD8770-VB can be used for efficient switching power supply designs, such as DC-DC converters and AC-DC power modules. Its low on-resistance and high current capability help improve power efficiency and reduce power consumption, and is suitable for computer power supplies, communication power supplies, and household appliance power supplies.
2. **Motor drive control**: FDD8770-VB can be used as a switching element in motor drive systems, especially in applications that require high current, such as power tools, electric vehicles, and industrial motor control systems. Its low conduction loss and high current carrying capacity can effectively improve the efficiency and stability of motor drives.
3. **Load Switch**: In high current load switch applications, the FDD8770-VB can be used for load control and power switching, suitable for home appliances, LED drivers and industrial equipment. Its low RDS(ON) and high current handling capability ensure stable switching performance and power transmission efficiency.
4. **Battery Management System (BMS)**: The FDD8770-VB can be used for switching and protection circuits in battery management systems, especially in lithium-ion battery packs and other energy storage devices. Its high current capability and low conduction loss help improve battery charging and discharging efficiency and the overall stability of the system.
5. **LED Lighting**: In high power LED lighting drivers, the FDD8770-VB is able to stably provide high current, suitable for applications such as commercial lighting, street lighting and stage lighting. Its low on-resistance helps improve the overall efficiency and reliability of the driver.
In summary, the FDD8770-VB MOSFET provides high current handling capability and low on-resistance, which is suitable for a variety of high-efficiency low-voltage power electronics applications and can effectively improve the performance and stability of the system.
FDD8770-VB MOSFET is very suitable for the following low-voltage power electronics applications due to its high current handling capability and low on-resistance:
1. **Power management**: In power management systems, FDD8770-VB can be used for efficient switching power supply designs, such as DC-DC converters and AC-DC power modules. Its low on-resistance and high current capability help improve power efficiency and reduce power consumption, and is suitable for computer power supplies, communication power supplies, and household appliance power supplies.
2. **Motor drive control**: FDD8770-VB can be used as a switching element in motor drive systems, especially in applications that require high current, such as power tools, electric vehicles, and industrial motor control systems. Its low conduction loss and high current carrying capacity can effectively improve the efficiency and stability of motor drives.
3. **Load Switch**: In high current load switch applications, the FDD8770-VB can be used for load control and power switching, suitable for home appliances, LED drivers and industrial equipment. Its low RDS(ON) and high current handling capability ensure stable switching performance and power transmission efficiency.
4. **Battery Management System (BMS)**: The FDD8770-VB can be used for switching and protection circuits in battery management systems, especially in lithium-ion battery packs and other energy storage devices. Its high current capability and low conduction loss help improve battery charging and discharging efficiency and the overall stability of the system.
5. **LED Lighting**: In high power LED lighting drivers, the FDD8770-VB is able to stably provide high current, suitable for applications such as commercial lighting, street lighting and stage lighting. Its low on-resistance helps improve the overall efficiency and reliability of the driver.
In summary, the FDD8770-VB MOSFET provides high current handling capability and low on-resistance, which is suitable for a variety of high-efficiency low-voltage power electronics applications and can effectively improve the performance and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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