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FDD86326-VB Product details
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FDD86326-VB MOSFET Product Introduction
The FDD86326-VB is a high-performance N-Channel MOSFET designed for applications that require medium voltage and high current handling. The device uses a TO252 package with excellent thermal performance and compact size. The FDD86326-VB has a maximum drain-source voltage (VDS) of 100V and can handle up to 45A of continuous drain current (ID). Using Trench technology, this MOSFET has a low on-resistance (RDS(ON)), providing high efficiency and stability in power conversion and switching applications.
The FDD86326-VB is a high-performance N-Channel MOSFET designed for applications that require medium voltage and high current handling. The device uses a TO252 package with excellent thermal performance and compact size. The FDD86326-VB has a maximum drain-source voltage (VDS) of 100V and can handle up to 45A of continuous drain current (ID). Using Trench technology, this MOSFET has a low on-resistance (RDS(ON)), providing high efficiency and stability in power conversion and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package: ** TO252
- **Configuration: ** Single N-Channel
- **Drain-source voltage (VDS): ** 100V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.8V
- **On-resistance (RDS(ON)): **
- 18mΩ @ VGS = 10V
- **Continuous leakage current (ID): ** 45A
- **Technology: ** Trench
- **Package: ** TO252
- **Configuration: ** Single N-Channel
- **Drain-source voltage (VDS): ** 100V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.8V
- **On-resistance (RDS(ON)): **
- 18mΩ @ VGS = 10V
- **Continuous leakage current (ID): ** 45A
- **Technology: ** Trench
Domain and module applications：
Application fields and module examples
1. **Power management system:** The FDD86326-VB is suitable for various power management systems, such as DC-DC converters and power supply modules. Its high current handling capability and low on-resistance enable it to efficiently manage the power conversion process, provide stable power output and reduce power loss.
2. **Motor control system:** In motor drive and control systems, the FDD86326-VB can handle high currents and is suitable for motor drive circuits. Its low on-resistance and high current handling capability help improve the efficiency and control accuracy of the motor, and is widely used in motor control modules in industrial automation and home appliances.
3. **Load switch:** This MOSFET is suitable for high current load switch applications. The high current capability and low on-resistance of the FDD86326-VB enable it to excel in load switching, power protection and battery management, and can effectively control and protect the power system.
4. **Power Inverters and Converters:** In power inverters and converters, the FDD86326-VB is capable of handling higher voltages and currents. Its high current handling capability and low on-resistance improve conversion efficiency, reduce heat generation, and ensure system reliability and stability in these high-power applications.
The FDD86326-VB's medium-to-high voltage handling capability, high current handling capability, and Trench technology make it an excellent choice for power management and switching applications, especially for applications that require high performance and reliability.
1. **Power management system:** The FDD86326-VB is suitable for various power management systems, such as DC-DC converters and power supply modules. Its high current handling capability and low on-resistance enable it to efficiently manage the power conversion process, provide stable power output and reduce power loss.
2. **Motor control system:** In motor drive and control systems, the FDD86326-VB can handle high currents and is suitable for motor drive circuits. Its low on-resistance and high current handling capability help improve the efficiency and control accuracy of the motor, and is widely used in motor control modules in industrial automation and home appliances.
3. **Load switch:** This MOSFET is suitable for high current load switch applications. The high current capability and low on-resistance of the FDD86326-VB enable it to excel in load switching, power protection and battery management, and can effectively control and protect the power system.
4. **Power Inverters and Converters:** In power inverters and converters, the FDD86326-VB is capable of handling higher voltages and currents. Its high current handling capability and low on-resistance improve conversion efficiency, reduce heat generation, and ensure system reliability and stability in these high-power applications.
The FDD86326-VB's medium-to-high voltage handling capability, high current handling capability, and Trench technology make it an excellent choice for power management and switching applications, especially for applications that require high performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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