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FDD86252-VB Product details
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1. FDD86252-VB Product Introduction
FDD86252-VB is a high voltage, high current N-channel MOSFET in TO-252 package. Designed using Trench technology, the device has a drain-source voltage (VDS) of up to 150V and a drain current (ID) handling capability of 40A. Its higher threshold voltage (Vth) is 3V, which is suitable for applications requiring higher voltage and current. The on-resistance of FDD86252-VB is 32mΩ @ VGS = 10V, which can effectively reduce power consumption and improve system efficiency.
FDD86252-VB is a high voltage, high current N-channel MOSFET in TO-252 package. Designed using Trench technology, the device has a drain-source voltage (VDS) of up to 150V and a drain current (ID) handling capability of 40A. Its higher threshold voltage (Vth) is 3V, which is suitable for applications requiring higher voltage and current. The on-resistance of FDD86252-VB is 32mΩ @ VGS = 10V, which can effectively reduce power consumption and improve system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 150V | 3V | 40A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 150V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 150V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. FDD86252-VB Detailed parameter description
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 32mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 32mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
Domain and module applications：
3. FDD86252-VB Application Fields and Modules
The high voltage and high current characteristics of FDD86252-VB enable it to excel in multiple fields and modules:
1. **High Voltage Power Management**: Due to its drain-source voltage capability of up to 150V, FDD86252-VB is suitable for high voltage power management applications such as high voltage DC-DC converters and power regulators. Its low on-resistance (32mΩ @ VGS = 10V) helps reduce power consumption and improve system efficiency, ensuring stable operation in high voltage environments.
2. **Power Conversion**: In power conversion modules such as power factor correction (PFC) circuits and high voltage power converters, FDD86252-VB is able to handle high voltage and high current, providing reliable switching performance. Its lower on-resistance ensures conversion efficiency and the overall energy efficiency of the system.
3. **Power Tools and Drivers**: The FDD86252-VB is suitable for power tools and drivers that require high current and high voltage. These applications typically require MOSFETs that can handle higher voltages to support the operation of electric motors and other loads while maintaining low power consumption and high efficiency.
4. **Industrial Applications**: In industrial equipment, such as motor drives and high-power switching circuits, the high voltage handling capability and stable performance of the FDD86252-VB make it ideal for these harsh application environments. It can maintain stable operation under high voltage and high current conditions, ensuring the reliability and long-term stability of the equipment.
The FDD86252-VB is a MOSFET suitable for high voltage, high current applications, and its high efficiency and reliability make it a key component in multiple fields and modules.
The high voltage and high current characteristics of FDD86252-VB enable it to excel in multiple fields and modules:
1. **High Voltage Power Management**: Due to its drain-source voltage capability of up to 150V, FDD86252-VB is suitable for high voltage power management applications such as high voltage DC-DC converters and power regulators. Its low on-resistance (32mΩ @ VGS = 10V) helps reduce power consumption and improve system efficiency, ensuring stable operation in high voltage environments.
2. **Power Conversion**: In power conversion modules such as power factor correction (PFC) circuits and high voltage power converters, FDD86252-VB is able to handle high voltage and high current, providing reliable switching performance. Its lower on-resistance ensures conversion efficiency and the overall energy efficiency of the system.
3. **Power Tools and Drivers**: The FDD86252-VB is suitable for power tools and drivers that require high current and high voltage. These applications typically require MOSFETs that can handle higher voltages to support the operation of electric motors and other loads while maintaining low power consumption and high efficiency.
4. **Industrial Applications**: In industrial equipment, such as motor drives and high-power switching circuits, the high voltage handling capability and stable performance of the FDD86252-VB make it ideal for these harsh application environments. It can maintain stable operation under high voltage and high current conditions, ensuring the reliability and long-term stability of the equipment.
The FDD86252-VB is a MOSFET suitable for high voltage, high current applications, and its high efficiency and reliability make it a key component in multiple fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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